Uda Hashim, Prof. Ts. Dr.: Recent submissions

Now showing items 181-200 of 244

    • Si-quantum Dots (QD) and SiO2 tunnel barriers 

      Sutikno, Madnasri; Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr. (Universiti Malaysia Perlis (UniMAP)Pejabat Timbalan Naib Canselor (Penyelidikan dan Inovasi), 2008-07)
      Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation ...

    • A cost effective and consummate fabrication teaching set up for microelectronic engineering undergraduate 

      Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr.; Mohammad Nuzaihan, Md Nor (Malaysian Invention & Design Society (MINDS), 2005-05-19)
      The package, which is fully designed and developed using KUKUM in-house expertise, is the first teaching laboratory that is purposely built for undergraduate microelectronic program in Malaysia.

    • Electrode design and planar uniformity of anodically etched small area porous silicon 

      Ahmed, N. M.; Zaliman, Sauli, Prof. Madya; Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr. (American Institute of Physics, 2009-06-01)
      Porous silicon layer microstructure is sensitive to many parameters, which need to be controlled during etching. These include not only anodization time, current density, applied potential and electrolyte composition but ...

    • Nanowire formation using electron beam lithography 

      Rahman, S. F. A.; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor; Mohamed Nuri, A. M.; Mohamad Emi Azri, Shohini; Salleh, S. (American Institute of Physics, 2009-06-01)
      Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly ...

    • A silicon-oxide-silicon vertically separated electrode nanogap device structure 

      Noor, N. H. M.; Uda, Hashim, Prof. Dr.; Muhamad Emi Azry, Shohini; Nuri, A. M. M. (American Institute of Physics, 2009-06-01)
      In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different ...

    • Pattern designed for combination of optical lithography and electron beam lithography 

      S. Fatimah, Abd Rahman; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor; A. M., Mohamed Nuri; Muhamad Emi Azri, Shohini (Universiti Malaysia Pahang, 2009-06-20)
      In this paper the fabricated pattern of nanometer and micrometer structures created with electron beam lithography (EBL) and optical lithography on silicon on insulator (SOI) material is presented. The resist used to ...

    • CdS film thickness characterization by R.F. magnetron sputtering 

      Uda, Hashim, Prof. Dr.; Kasim, Abdul Rahman; Hakim; Mohd Azri, Othman (American Institute of Physics, 2009-06-01)
      In this work, cadmium sulphide (CdS) target with 99.999% purity was used as a target in RF magnetron sputtering. The sputtering experiment was conducted onto silicon oxide substrates at different temperatures ranging from ...

    • Design of digital control frequency sinusoidal wave generator for dielectric analyzer 

      A., Saifullah; Uda, Hashim, Prof. Dr. (Universiti Malaysia Pahang, 2009-06-20)
      The dielectric analyses are usually done using capacitance measurement technique. A set of sinusoidal wave frequency are applied to the capacitance. This paper is about the design of digital control frequency of ...

    • Man-2403 resist development for electron beam lithography process 

      Nur Hamidah, Abdul Halim; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor (Universiti Malaysia Pahang, 2009-06-20)
      Line-width of resist patterns is more susceptible to the developing time than the thickness of the undeveloped resist. This project focused on the development of MaN-2403 resist for e-beam lithography process. The ...

    • Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition 

      Ruslinda, Abd. Rahim; Uda, Hashim, Prof. Dr.; Fukuda, Hisashi; Tada, Yoshihiro; Wainai, Noriyuki; Uesugi, Katsuhiro; Shimoyama, Yuhei (American Institute of Physics, 2009-06-01)
      Metal-insulator-semiconductor field effect transistor (MISFET) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films using a focused ion beam chemical vapor deposition (FIBCVD) system with a precursor of ...

    • Nanogap biosensor development for DNA immobilization and hybridization detection 

      Th. S., Dhahi; Uda, Hashim; N. M., Ahmed; A., Mat Taib (Universiti Malaysia Pahang, 2009-06-20)
      In the past two decades, the biological and medical fields have seen great advances in the development of biosensors and biochips capable of characterizing and quantifying biomolecules. To understand the important ...

    • Development of nanogap based dielectric biosensor for label-free medical diagnostic analytical measurement 

      A., Mat Taib; Uda, Hashim, Prof. Dr.; N. A., Yusof; Th. S., Dhahi (Universiti Malaysia Pahang, 2009-06-20)
      Biosensor with electrode distances 75 nm and highly sensitive and selective is proposed in this research. The target application is the label-free detection of bio-molecular interaction for medical diagnostic ...

    • Technical study of digital display using Peripheral Interface Controller (PIC) microcontroller based system 

      Mohd Nasir, Haron; Uda, Hashim, Prof. Dr. (Universiti Malaysia Pahang, 2009-06-20)
      Digital display system is the most popular technology and most compatible with the embedded system devices. The word digital is most commonly used in computing and electronics, especially where real-world information ...

    • Pressure effect on Si quantum-dot potential 

      Yarub K. A., Al-Douri; Uda, Hashim, Prof. Dr.; Ahmed, N. M.; Zaliman, Sauli, Prof. Madya (American Institute of Physics, 2009-06-01)
      Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect ...

    • Development of nanogap automated permittivity measurement system for DNA hybridization detection kit 

      Saifullah, A.; Azri, M. E.; Uda, Hashim, Prof. Dr. (Institute of Electrical and Electronics Engineering (IEEE), 2009-12-14)
      The Nanogap Automated Permittivity Measurement System (APMS) are fabricated as low cost, portable and label free DNA hybridization detection kit. The nanogap capacitor can react as a dna sensor. The difference in dielectric ...

    • A Cost Effective Negative Plenum Cleanroom for Microelectronic Engineering Undergraduate Programme 

      Uda, Hashim, Prof. Madya Dr.; Zul Azhar, Zahid Jamal, Prof. Dr.; Nur Hamidah, Abdul Halim; Mohammad Nuzaihan, Md Nor (Kementerian Pengajian Tinggi Malaysia (KPTM), 2005-09-30)
      To design and build a microelectronic cleanroom which is compatible to other commercially installed clenroom for the purpose of teaching undergraduate and postgraduate students in the field of microelectronic fabrication.

    • MOS Transistor Mask Design Using SEM Based E-Beam Lithography 

      Uda, Hashim, Prof. Dr.; Nur Hamidah, Abdul Halim; Mohammad Nuzaihan, Md Nor; Zul Azhar, Zahid Jamal, Prof. Dr. (Malaysian Invention & Design Society (MINDS), 2006-05-19)
      Electron beam lithography (EBL) is one of the alternative tools in transferring micro and nano circuit patterns from design editor to the substrate. EBL is state-of-the-art technology for micro and even to nano feature ...

    • MOSFET Technology for Microelectronic Engineering Undergraduate Programme 

      Zul Azhar, Zahid Jamal, Prof. Dr.; Uda, Hashim, Prof. Dr.; Nur Hamidah, Abdul Halim; Mohammad Nuzaihan, Md Nor (Kementerian Pengajian Tinggi Malaysia (KPTM), 2005-09-30)
      This project focused on the process development of MOSFET fabrication. Microelectronic fabrication equipment and facilities from the micro fabrication cleanroom laboratory in KUKUM were used for the purposes of this project. ...

    • MOS Transistor (Fabricated Using In-House Low Cost Facilities) 

      Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr.; Nur Hamidah, Abdul Halim; Mohammadd Nuzaihan, Mohd Nor; Mohd Sallehudin, Saad; Phang, Keng Chew; Haffiz, Abd Razak; Bahari, Man (Malaysian Invention & Design Society (MINDS), 2006-05-19)
      MOS Transistor is divided into two types: NMOS and PMOS. Majority carrier od NMOS is electrons whereby PMOS is holes. The MOS transistor consists of three regions namely source, drain and gate. Fabrication of MOS transistor ...

    • Nanogap Dielectric Capacitor for Label Free Bio-Molecules Detection 

      Uda, Hashim, Prof. Dr.; Asmah, Mat Taib; Azizullah, Saifullah; Muhammad Emi, Azri Shohini; Thikra, S. Dhahi (Malaysian Invention and Design Society (MINDS), 2010-05-14)
      This research demonstrating that nanogap biosensor was fabricated by standard CMOS technologies function as extremely sensitive and selective biosensor for biomolecular detection and medical diagnostic application using ...