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    A silicon-oxide-silicon vertically separated electrode nanogap device structure

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    A silicon-oxide-silicon vertically separated electrode nanogap device structure.pdf (41.20Kb)
    Date
    2009-06-01
    Author
    Noor, N. H. M.
    Uda, Hashim, Prof. Dr.
    Muhamad Emi Azry, Shohini
    Nuri, A. M. M.
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    Abstract
    In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different oxide thickness), and we show that this vertically separated nanogap is better at providing accurate and conclusive results than a standard setup. The results demonstrate that this nanogap sensor presents a powerful potential platform for identifying conformational states of molecular scale events.
    URI
    http://link.aip.org/link/?APCPCS/1136/499/1
    http://dspace.unimap.edu.my/123456789/8824
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    • Conference Papers [2599]
    • Uda Hashim, Prof. Ts. Dr. [243]

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