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    Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition

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    Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition.pdf (47.22Kb)
    Date
    2009-06-01
    Author
    Ruslinda, Abd. Rahim
    Uda, Hashim, Prof. Dr.
    Fukuda, Hisashi
    Tada, Yoshihiro
    Wainai, Noriyuki
    Uesugi, Katsuhiro
    Shimoyama, Yuhei
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    Abstract
    Metal-insulator-semiconductor field effect transistor (MISFET) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films using a focused ion beam chemical vapor deposition (FIBCVD) system with a precursor of low energy Ga+ ion and carbon source to fabricate organic thin film transistor (OTFT) memories. The crystallinity of nc-C was investigated by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate the evidence of crystallization of nc-C after annealed at 600 degree celcius by the sharp peak at 1565 cm-1 in graphite (sp2), while no peak of diamond (sp3) could be seen at 1333 cm-1. The AFM images showed the nc-C dots controlled with diameter of 100 nm, 200 nm and 300 nm, respectively. The above results revealed that the nc-C dots had sufficiently stick onto SiO2 films. The characteristic of the OTFTs operated at negative gate bias shows the p-channel enhancement behavior, and shows the most saturation behavior.
    URI
    http://link.aip.org/link/?APCPCS/1136/297/1
    http://dspace.unimap.edu.my/123456789/8637
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    • Conference Papers [2599]
    • Uda Hashim, Prof. Ts. Dr. [243]

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