Man-2403 resist development for electron beam lithography process

Abstract

Line-width of resist patterns is more susceptible to the developing time than the thickness of the undeveloped resist. This project focused on the development of MaN-2403 resist for e-beam lithography process. The objective of this project is to observe the effect of exposure dose and development time to the physical structure of maN-2403 resist using scanning electron microscope (SEM) and atomic force microscopy (AFM). The incomplete development of exposed resist pattern caused bridging effect in ma-N2403 resist tone.