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dc.contributor.authorNur Hamidah, Abdul Halim
dc.contributor.authorUda, Hashim, Prof. Dr.
dc.contributor.authorMohammad Nuzaihan, Md Nor
dc.date.accessioned2010-08-13T04:50:02Z
dc.date.available2010-08-13T04:50:02Z
dc.date.issued2009-06-20
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/8646
dc.descriptionMalaysian Technical Universities Conference on Engineering and Technology organized by Universiti Malaysia Pahang in collaboration with Universiti Tun Hussein Onn Malaysia, Universiti Teknikal Malaysia Melaka & Universiti Malaysia Perlis on June 20th - 22nd, 2009, at MS Garden Hotel, Kuantan, Pahang, Malaysia.en_US
dc.description.abstractLine-width of resist patterns is more susceptible to the developing time than the thickness of the undeveloped resist. This project focused on the development of MaN-2403 resist for e-beam lithography process. The objective of this project is to observe the effect of exposure dose and development time to the physical structure of maN-2403 resist using scanning electron microscope (SEM) and atomic force microscopy (AFM). The incomplete development of exposed resist pattern caused bridging effect in ma-N2403 resist tone.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Pahangen_US
dc.relation.ispartofseriesProceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009en_US
dc.subjectE-beam lithographyen_US
dc.subjectResist developmenten_US
dc.subjectmaN-2403en_US
dc.subjectMalaysian Technical Universities Conference on Engineering and Technology (MUCEET)en_US
dc.titleMan-2403 resist development for electron beam lithography processen_US
dc.typeWorking Paperen_US


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