Now showing items 190-209 of 253

    • Selection of optimal parameters in fabrication of poly (dimethylsiloxane) microfluidics using taguchi method 

      Tijjani Adam, Shuwa; Uda, Hashim, Prof. Dr.; Leow, Pei Ling; Foo, Kai Loong; Chee, Pei Song (American Scientific Publishers, 2013-01)
      The excellent performance and achievements by the microfluidics systems at fluid flow manipulation in the recent years have ignited the passion and interest of many researchers around the world, Since a microfluidic is ...
    • Selective growth of ZnO nanorods on microgap electrodes and their applications in UV sensors 

      Qazi Muhammad, Humayun; Muhammad Kashif, Muhammad Faroow; Uda, Hashim, Prof. Dr.; Ahsanulhaq, Qurashi (Springer, 2014-01)
      Selective area growth of ZnO nanorods is accomplished on microgap electrodes (spacing of 6μm) by using a facile wet chemical etching process. The growth of ZnO nanorods on a selected area of microgap electrode is carried ...
    • Semiconductor Nanowire 

      Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor; Nur Hamidah, Abdul Halim (Kementerian Pengajian Tinggi Malaysia (KPTM), 2007-08-10)
      Semiconductor Nanowire represents an important and broad class of nanometer scale wire structure. Semiconductor Nanowire is a wire of dimension of the order of a nanometer or 10-9 meters. It is the one thousand times ...
    • Sensitivity of A-549 human lung cancer cells to nanoporous zinc oxide conjugated with Photofrin 

      Muhammad, Fakhar-E-Alam; Syed Muhammad Usman, Ali; Zafar Hussain, Ibupoto; Kimleang, Khun; Muhammad, Atif; Mohammad, Kashif; Loong, Foo Kai; Uda, Hashim, Prof. Dr.; Willander, Magnus (Springer-Verlag London Ltd., 2012-05)
      In the present study, we demonstrated the use of nanoporous zinc oxide (ZnO NPs) in photodynamic therapy. The ZnO NPs structure possesses a high surface to volume ratio due to its porosity and ZnO NPs can be used as an ...
    • Shallow junction formation: A simulation based study of thermal diffusion by spin-on-dopants technique 

      Uda, Hashim, Prof. Dr.; Tijjani Adam, Shuwa; Nik Hazura, Nik Hamat; Siti Fatimah (AENSI Publications, 2012)
      Ultra shallow junction fabrication in large scaled integrated (ULSI) technology is one of the difficult challenges in device manufacturing. Low energy ion implantation is the most widely used technique at present to form ...
    • Si-quantum Dots (QD) and SiO2 tunnel barriers 

      Sutikno, Madnasri; Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr. (Universiti Malaysia Perlis (UniMAP)Pejabat Timbalan Naib Canselor (Penyelidikan dan Inovasi), 2008-07)
      Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation ...
    • Silica Titania Optical Thick Film by Multi-spinning Sol-gel process 

      Mohamad Zahid, A. Malek; Uda, Hashim; Mat Tamizi, Hj Zainuddin; Ahmad Makarimi, Abdullah; Aishah, Isnin (Kolej Universiti Kejuruteraan Utara Malaysia, 2006)
      Sol-gel process has been used for producing high purity and homogenous optical thin films. A high quality, crack free optical thin film and low processing cost are key success factor for optical applications especially in ...
    • Silicon nanowire sensor by mix and match lithography process: Fabrication and characterization 

      Uda, Hashim, Prof. Dr. (American Institute of Physics, 2012-06-06)
      Silicon nanowires (SiNWs) have attracted significant interest in the study because of their potential to impact applications from nanoscale electronics to biomedical engineering. E-Beam Lithography couple with standard ...
    • Silicon Nanowires 

      Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor; Nur Hamidah, Abdul Halim (Malaysian Invention and Design Society (MINDS), 2007-05-18)
      Silicon Nanowires is a new class of materials that have attracted attention and great research interest in the last few years because of their great potential applications in nanotechnology such as: - nanoelectronic ...
    • Silicon Nanowires 

      Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor; Nur Hamidah, Abdul Halim (AFAG Messen & Ausstellungen GmbH, 2007-11-01)
      Silicon Nanowires with diameter or width of the order of a nanometer or 10o meter and length of the order of microns propel for a novel research in the construction of atomically controlled periodic systems with reduced ...
    • Silicon Nanowires Based DNA Biosensor 

      Uda, Hashim, Prof. Dr.; Siti Fatimah, Abdul Rahman; Muhammad Emi Azri, Shohini (Malaysia Association of Research Scientists (MARS), 2010-02-04)
      This research describes the fabrication of silicon nanowire for DNA hybridization detection in biosensor application. The SiNWs are fabricated by electron beam lithography and followed by deposition of contact metals. Aurum ...
    • A silicon-oxide-silicon vertically separated electrode nanogap device structure 

      Noor, N. H. M.; Uda, Hashim, Prof. Dr.; Muhamad Emi Azry, Shohini; Nuri, A. M. M. (American Institute of Physics, 2009-06-01)
      In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different ...
    • A simple one-step anodising method for the synthesis of ordered porous anodic alumina 

      Voon, Chun Hong; Mohd Nazree, Derman, Dr.; Uda, Hashim, Prof. Dr.; Khairel Rafezi Ahmad, Dr.; Ho, Li Ngee (Taylor & Francis, 2014)
      Porous anodic alumina (PAA) has been produced on aluminium substrate by single-step anodising at 50 V in 0.3 M oxalic acid at 15°C for 60 min. The highly ordered pore and cell structure was achieved by subjecting the PAA ...
    • A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation 

      Madnarski Sutikno; Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr. (Elsevier B.V., 2007-05)
      The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, ...
    • Simulasi Fabrikasi Simpangan Cetek Ultra menggunakan Resapan Dopan daripada SOD (Spin On Dopant) 

      Uda, Hashim; Nik Hazura, Nik Hamat; Fauziyah, Salehuddin; Ibrahim, Ahmad; Sutikno Madnasri (Universiti Malaysia Perlis, 2006)
      Pembentukan simpangan cetek ultra merupakan suatu proses yang kritikal dalam fabrikasi peranti-peranti submikron bagi teknologi litar terkamil pada masa hadapan. Di dalam penulisan ini, simulasi proses pembentukan simpangan ...
    • Simulation of 1GHz center frequency SAW using CST software for biosensor application 

      Mohd Rosydi, Zakaria; Uda, Hashim, Prof. Dr.; M. H. I., Mohd Amin; Tijjani Adam, Shuwa; M. Wesam, Al-Mufti (IDOSI Publications, 2013)
      Surface Acoustic Wave (SAW) is a one of the essential components that used for sensor application to detect in various fields. The high center frequencywill improve the sensitivity of SAW biosensor. Therefore, it's very ...
    • Single-Electron Transistors (SET): literature review 

      Amiza, Rasmi; Uda, Hashim (Kolej Universiti Kejuruteraan Utara Malaysia, 2005)
      Single-electron transistor (SET) is a key element in our research field where device operation is based on one-by-one electron through the channel utilizing the Coulomb blockade effect. The SET are often discussed as ...
    • SOI based nanowire single-electron transistors: design, simulation and process development 

      Uda Hashim; A. Rasmi; Samsudi Sakrani (Universiti Malaysia Perlis, 2008)
      One of the great problems in current large-scale integrated circuits is increasing power dissipation in a small silicon chip. Single-electron transistors which operate by means of one-by-one electron transfer, is relatively ...
    • SOI Single-Electron Transistors (SET) design and process development 

      Amiza, Rasmi; Mohammad Nuzaihan, Md Nor; Uda, Hashim (Kolej Universiti Kejuruteraan Utara Malaysia, 2005-05-18)
      Single-electron transistor (SET) is attractive devices to use for large-scale integration. SET can be made very small, dissipate little power, and can measure quantities of charge much faster than MOSFETs. This makes SET ...
    • Sol-gel derived ZnO nanoparticulate films for ultraviolet photodetector (UV) applications 

      Foo, Kai Loong; Muhammad Kashif, Muhammad Faroow; Uda, Hashim, Prof. Dr.; Md Eaqub, Ali, Dr. (Elsevier GmbH, 2013-11)
      Zinc oxide nanoparticles based UV detector was fabricated on thermally oxidized silicon substrate. ZnO nanoparticle films were deposited using sol-gel route. The seed solution was prepared using two different solvents ...