Now showing items 41-60 of 243

    • Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process 

      Sutikno, Madnasri; Uda, Hashim; Zul Azhar, Zahid Jamal (IOP Publishing Ltd, 2008-01-29)
      The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ...
    • Si-quantum Dots (QD) and SiO2 tunnel barriers 

      Sutikno, Madnasri; Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr. (Universiti Malaysia Perlis (UniMAP)Pejabat Timbalan Naib Canselor (Penyelidikan dan Inovasi), 2008-07)
      Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation ...
    • Nanowire conductance biosensor by spacer patterning lithography technique for DNA hybridization detection: Design and fabrication method 

      Uda, Hashim, Prof. Dr.; Shahrir, Salleh; Emi, Azri Shohini; Siti Fatimah, Abd Rahman (Institute of Electrical and Electronics Engineers (IEEE), 2008-11-04)
      The use of Silicon nanowires has allowed the introduction of many new signal transduction technologies in biosensors. The sensitivity and performance of biosensors is being improved by using doping process for their ...
    • Design and fabrication of Nanowire-based conductance biosensor using spacer patterning technique 

      Uda, Hashim; Shahrir, Salleh; Siti Fatimah, Abd Rahman; Amir Razif Arief, Jamil Abdullah (Institute of Electrical and Electronics Engineering (IEEE), 2008-12-01)
      Materials have different behaviours and properties at the nanoscales (1-100nm). New theories and discoveries have been found in designing and fabricating at these sizes. Silicon Nanowires has allowed the introduction of ...
    • Mask design and fabrication of LiSFET for light sensor application 

      Uda, Hashim; Kasim, Abdul Rahman; Amir Razif Arief, Jamil Abdullah (Institute of Electrical and Electronics Engineering (IEEE), 2008-12-01)
      The usage of MOSFET is not limited as amplifier and switch only but it has great potential to become the sensors when sensing mediums which integrated on to MOSFET. This research is intended to study the combination of ...
    • Design and process development of silicon nanowire based DNA biosensor using electron beam lithography 

      Uda, Hashim; Siti Fatimah, Abd Rahman; Mohammad Nuzaihan, Md Nor; Shahrir, Salleh (Institute of Electrical and Electronics Engineering (IEEE), 2008-12-01)
      Silicon nanowires (SiNWs) have their unique feature such as similar diameters to biomolecules, chemically tailorable physical properties, enable to apply in biomolecule detection and can be fabricated as a high performance ...
    • Nanotechnology development in Malaysia: current status and implementation strategy 

      Uda, Hashim; Elley Nadia; Shahrir, Salleh (Universiti Malaysia Perlis, 2008-12-05)
      Nano-technology development needs all the support it could get to ensure the technology is being leveled up and benefits all mankind. Malaysia has started it own micro-technology and nano-technology development since the ...
    • Nano-silver microcavity enhanced UV GaN light emitter 

      Naser Mahmoud, Ahmed; Zaliman, Sauli; Uda, Hashim; Zul Azhar, Zahid Jamal (Inderscience Enterprises Limited, 2009)
      We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire ...
    • Thermal aging study at 150 °C and 200 °C: Gold ball bonds to aluminum bond pad 

      Mohd Khairuddin, Md Arshad; Lim, Moy Fung; Uda, Hashim; Zaliman, Sauli (The Electrochemical Society, 2009-03-17)
      This paper presents the study of the thermal aging of the gold ball bonds and aluminum bond pad at 150 °C and 200 °C for various interval times. Process decapsulation and Field Emission Scanning Electron Microscopy (FESEM) ...
    • Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition 

      Ruslinda, Abd. Rahim; Uda, Hashim, Prof. Dr.; Fukuda, Hisashi; Tada, Yoshihiro; Wainai, Noriyuki; Uesugi, Katsuhiro; Shimoyama, Yuhei (American Institute of Physics, 2009-06-01)
      Metal-insulator-semiconductor field effect transistor (MISFET) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films using a focused ion beam chemical vapor deposition (FIBCVD) system with a precursor of ...
    • Pressure effect on Si quantum-dot potential 

      Yarub K. A., Al-Douri; Uda, Hashim, Prof. Dr.; Ahmed, N. M.; Zaliman, Sauli, Prof. Madya (American Institute of Physics, 2009-06-01)
      Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect ...
    • Electrode design and planar uniformity of anodically etched small area porous silicon 

      Ahmed, N. M.; Zaliman, Sauli, Prof. Madya; Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr. (American Institute of Physics, 2009-06-01)
      Porous silicon layer microstructure is sensitive to many parameters, which need to be controlled during etching. These include not only anodization time, current density, applied potential and electrolyte composition but ...
    • A silicon-oxide-silicon vertically separated electrode nanogap device structure 

      Noor, N. H. M.; Uda, Hashim, Prof. Dr.; Muhamad Emi Azry, Shohini; Nuri, A. M. M. (American Institute of Physics, 2009-06-01)
      In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different ...
    • CdS film thickness characterization by R.F. magnetron sputtering 

      Uda, Hashim, Prof. Dr.; Kasim, Abdul Rahman; Hakim; Mohd Azri, Othman (American Institute of Physics, 2009-06-01)
      In this work, cadmium sulphide (CdS) target with 99.999% purity was used as a target in RF magnetron sputtering. The sputtering experiment was conducted onto silicon oxide substrates at different temperatures ranging from ...
    • Nanowire formation using electron beam lithography 

      Rahman, S. F. A.; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor; Mohamed Nuri, A. M.; Mohamad Emi Azri, Shohini; Salleh, S. (American Institute of Physics, 2009-06-01)
      Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly ...
    • Technical study of digital display using Peripheral Interface Controller (PIC) microcontroller based system 

      Mohd Nasir, Haron; Uda, Hashim, Prof. Dr. (Universiti Malaysia Pahang, 2009-06-20)
      Digital display system is the most popular technology and most compatible with the embedded system devices. The word digital is most commonly used in computing and electronics, especially where real-world information ...
    • Development of nanogap based dielectric biosensor for label-free medical diagnostic analytical measurement 

      A., Mat Taib; Uda, Hashim, Prof. Dr.; N. A., Yusof; Th. S., Dhahi (Universiti Malaysia Pahang, 2009-06-20)
      Biosensor with electrode distances 75 nm and highly sensitive and selective is proposed in this research. The target application is the label-free detection of bio-molecular interaction for medical diagnostic ...
    • Design of digital control frequency sinusoidal wave generator for dielectric analyzer 

      A., Saifullah; Uda, Hashim, Prof. Dr. (Universiti Malaysia Pahang, 2009-06-20)
      The dielectric analyses are usually done using capacitance measurement technique. A set of sinusoidal wave frequency are applied to the capacitance. This paper is about the design of digital control frequency of ...
    • Pattern designed for combination of optical lithography and electron beam lithography 

      S. Fatimah, Abd Rahman; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor; A. M., Mohamed Nuri; Muhamad Emi Azri, Shohini (Universiti Malaysia Pahang, 2009-06-20)
      In this paper the fabricated pattern of nanometer and micrometer structures created with electron beam lithography (EBL) and optical lithography on silicon on insulator (SOI) material is presented. The resist used to ...
    • Man-2403 resist development for electron beam lithography process 

      Nur Hamidah, Abdul Halim; Uda, Hashim, Prof. Dr.; Mohammad Nuzaihan, Md Nor (Universiti Malaysia Pahang, 2009-06-20)
      Line-width of resist patterns is more susceptible to the developing time than the thickness of the undeveloped resist. This project focused on the development of MaN-2403 resist for e-beam lithography process. The ...