Browsing Uda Hashim, Prof. Ts. Dr. by Issue Date
Now showing items 41-60 of 249
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Silicon Nanowires
(AFAG Messen & Ausstellungen GmbH, 2007-11-01)Silicon Nanowires with diameter or width of the order of a nanometer or 10o meter and length of the order of microns propel for a novel research in the construction of atomically controlled periodic systems with reduced ... -
Nano patterning of cone dots and nano constrictions of negative e-beam resist for single electron transistor fabrication
(Springer New York, 2007-12)We present an optimization of nano dot of negative tone e-beam resist which is a very important step in single electron transistor fabrication process. The optimum design of dot and nano constriction plays a significant ... -
Characterization of intermetallic growth of gold ball bonds on aluminum bond pads
(University of Malaya, 2008)In this paper the intermetallic growth between gold ball bond and aluminum bond pad are studied. It involves thermal aging at 150 °C and 200 °C for various time intervals. The relationship between electrical resistance and ... -
Effect of alignment mark depth on alignment signal behavior in advanced lithography
(Universiti Malaysia Perlis, 2008)Finding a robust alignment strategy is one of the key evaluations in defining photolithography process. Alignment is a process to determine how the current pattern is placed on the wafer. Alignment is done by an optical ... -
Quantum DOT Single Electron Transistor
(School of Microelectronic Engineering, 2008-01-09) -
Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
(IOP Publishing Ltd, 2008-01-29)The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ... -
Si-quantum Dots (QD) and SiO2 tunnel barriers
(Universiti Malaysia Perlis (UniMAP)Pejabat Timbalan Naib Canselor (Penyelidikan dan Inovasi), 2008-07)Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation ... -
Nanowire conductance biosensor by spacer patterning lithography technique for DNA hybridization detection: Design and fabrication method
(Institute of Electrical and Electronics Engineers (IEEE), 2008-11-04)The use of Silicon nanowires has allowed the introduction of many new signal transduction technologies in biosensors. The sensitivity and performance of biosensors is being improved by using doping process for their ... -
Design and fabrication of Nanowire-based conductance biosensor using spacer patterning technique
(Institute of Electrical and Electronics Engineering (IEEE), 2008-12-01)Materials have different behaviours and properties at the nanoscales (1-100nm). New theories and discoveries have been found in designing and fabricating at these sizes. Silicon Nanowires has allowed the introduction of ... -
Mask design and fabrication of LiSFET for light sensor application
(Institute of Electrical and Electronics Engineering (IEEE), 2008-12-01)The usage of MOSFET is not limited as amplifier and switch only but it has great potential to become the sensors when sensing mediums which integrated on to MOSFET. This research is intended to study the combination of ... -
Design and process development of silicon nanowire based DNA biosensor using electron beam lithography
(Institute of Electrical and Electronics Engineering (IEEE), 2008-12-01)Silicon nanowires (SiNWs) have their unique feature such as similar diameters to biomolecules, chemically tailorable physical properties, enable to apply in biomolecule detection and can be fabricated as a high performance ... -
Nanotechnology development in Malaysia: current status and implementation strategy
(Universiti Malaysia Perlis, 2008-12-05)Nano-technology development needs all the support it could get to ensure the technology is being leveled up and benefits all mankind. Malaysia has started it own micro-technology and nano-technology development since the ... -
Nano-silver microcavity enhanced UV GaN light emitter
(Inderscience Enterprises Limited, 2009)We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire ... -
Thermal aging study at 150 °C and 200 °C: Gold ball bonds to aluminum bond pad
(The Electrochemical Society, 2009-03-17)This paper presents the study of the thermal aging of the gold ball bonds and aluminum bond pad at 150 °C and 200 °C for various interval times. Process decapsulation and Field Emission Scanning Electron Microscopy (FESEM) ... -
Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition
(American Institute of Physics, 2009-06-01)Metal-insulator-semiconductor field effect transistor (MISFET) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films using a focused ion beam chemical vapor deposition (FIBCVD) system with a precursor of ... -
Pressure effect on Si quantum-dot potential
(American Institute of Physics, 2009-06-01)Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect ... -
Electrode design and planar uniformity of anodically etched small area porous silicon
(American Institute of Physics, 2009-06-01)Porous silicon layer microstructure is sensitive to many parameters, which need to be controlled during etching. These include not only anodization time, current density, applied potential and electrolyte composition but ... -
A silicon-oxide-silicon vertically separated electrode nanogap device structure
(American Institute of Physics, 2009-06-01)In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different ... -
CdS film thickness characterization by R.F. magnetron sputtering
(American Institute of Physics, 2009-06-01)In this work, cadmium sulphide (CdS) target with 99.999% purity was used as a target in RF magnetron sputtering. The sputtering experiment was conducted onto silicon oxide substrates at different temperatures ranging from ... -
Nanowire formation using electron beam lithography
(American Institute of Physics, 2009-06-01)Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly ...