Now showing items 115-134 of 153

    • Simulation Of 0.35 Um NMOS Process Based on UniMAP Cleanroom Facilities 

      Izny Atikah Ahmad Fahmi (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-05)
      The Micro Fabrication Cleanroom in University Malaysia Perlis (UniMAp) was completed in December 2003 and was built as a teaching laboratory. The goal of this project is to simulate a 0.35um negative-metal-oxide-semiconductor ...
    • Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories 

      Zainab Ramli (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)
      The goal of simulating the ion implantation is to predict the distribution of implanted ions in the target and also to predict the amount of damage generated in the target. During ion implantation process, accelerated ions ...
    • Simulation on Effects of Different Types of Channel/Drain Engineering Structure on MOS Device Performance 

      Norazlina Mohd Amin (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)
      This final year project is aimed to analyze the effects of three different types of channel/drain engineering structure on MOS transistor performance. As a project basis, a 0.35μm process recipe from UC Berkeley is used ...
    • Simulation on Parameter and Characteristics Extraction Between Two Simulation Packages (Synopsys and PSpice) 

      Nor Aznin Sakrani (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)
      The progress of silicon technologies in the last twenty years has traced the path to the unprecedented revolution of information technologies, which has changed everybody’s lifestyles. Apparently, this has happened with ...
    • Simulation, fabrication and electrical characterization of p-Si capacitor design structure 

      Cheryl She Siew Yuet (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)
      Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. It performs the ...
    • Single Crystal SiC Capacitive pressure sensor design and analysis using MEMS Pro L-Edit and Samcef Field & Oofelie software 

      Ruhaizi Mohd Hatta (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)
      Single crystal 3C-SiC capacitive pressure sensors are proposed for high-temperature sensing applications. SiC is an attractive material for harsh environment micromachined transducers due to its outstanding electrical, ...
    • Smart Arm Robot using Visual Basic program 

      Wee Joo Ann (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)
      The aim of the project was to design the software using Visual Basic program to control the robot arm, design the electronic circuit and build the Robot Arm. The controlling of the robot arm using wireless radio frequency ...
    • Smart office for indoor based system 

      Chua, Yong Cher (Universiti Malaysia Perlis (UniMAP)School of Microelectronic Engineering, 2011-04)
      The smart office project emphasize on the design of indoor system of an office. For this project, the system implies the timer controller, magnetic door, person counter controller and infrared sensor. A microcontroller ...
    • Stable 2 Stage CMOS Amplifier 

      Ahmad Zainoldiar, Khalidi (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)
      In the last few years there has been an effort to integrate electrochemical instrumentation. A critical component of such a system is an amplifier. These projects design a “Stable Two stage CMOS amplifier”. This is achieved ...
    • Study and design Infrared Beacon for the blind 

      Mohd Fadzlie Rasit (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)
      Mobility for the blind is always a great problem. They always need assistance from people around to move to the place that they want to. The present method like a walking stick is effective but restricted them from moving ...
    • Study and Design the Current Mirror using Bulk-Driven Technique for Low Voltage Analog 

      Mohd Faidzul Bukhari Mohd Kanafiah (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)
      Current Mirrors are core structure for almost all analog and mixed mode circuits and the performance of analog structures largely depends on the characteristic. In this design, the design presents some of the low voltage ...
    • Study and improvement of UniMAP Air Shower Room 

      Lau Iyu Pin (Universiti Malaysia Perlis, 2008-04)
      This Air Shower Room is a project that will be used to control air quality especially to all industry and all semiconductor factory. The air blower which is play a main function will absorb the dust and dirt from the ...
    • Study in Design of 32 X 4Bit Static Random Access Memory (SRAM) 

      Nor Bashariah Muhamad Bakhtiar (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)
      Study in design Static Random Access Memory (SRAM) using Mentor Graphic and simulation process with Eldo simulator. The research made on the operation of six transistors, its advantage over Dynamic Random Access Memory ...
    • Study of acceleratin voltage influence the Conical structure during Electron Beam Induced Deposition (EBID) 

      Muhammad Afif Abdul Rahman (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)
      Electron beam induced deposition (EBID) is a well established technique for highresolution direct material deposition from the gas phase onto a substrate. A finely focused electron beam of a scanning electron microscope ...
    • Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM 

      Nur Syuhada Md.Desa (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-03)
      A study of aspect ratio performance on silicon oxide is developing to predict the oxide profile on surface of wafer. The main focus of this project is to perform and produce a high profile of silicon oxide under profiler ...
    • Study of Deposition Time Influence the Conical Structure during Electron Beam Induced Deposition (EBID) 

      Mohamad Sharizal Md Ilias (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)
      Atomic force microscopy (AFM) is now a well-established technique for the surface characterization and imaging of a variety of materials. In AFM the accuracy of data is often limited by the tip geometry and the effect on ...
    • A study of proper integrated circuit (IC) layout techniques for a parallel adder 

      Kau, Zee Shuang (Universiti Malaysia Perlis (UniMAP)School of Microelectronic Engineering, 2011-06)
      This report presents the proper Integrated Circuit (IC) layout techniques for a parallel adder. The layout produced for this parallel adder is presented in this report. In order to design and to get a good layout, ...
    • Study of Semi-Recessed LOCOS for Quasi-nanoscale CMOS Device Isolation 

      Mohamad Idzham Abd Sani (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-03)
      This project is entitled as semi-recessed LOCOS for CMOS device isolation. Local oxidation (LOCOS) technique is a widely used method for device isolation in semiconductor process integration. It is a simple, cheap yet and ...
    • Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile 

      Zaharah Mohamed (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2008-04)
      The principal focus of this project is dry etching technique by using the Inductively Couple Plasma-Reactive Ion Etching (ICP-RIE). An (ICP) system was chosen because of its high plasma density and low cost relative to ...
    • The study of the effect of MOS transistor scaling on the critical device parameters 

      Zazurina Abd Rahman (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2007-04)
      Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser ...