School of Microelectronic Engineering (Articles): Recent submissions
Now showing items 141-160 of 185
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A 1.5 V, 0.85-13.35 GHZ MMIC low noise amplifier design using optimization technique
(Institution of Electronics and Telecommunication Engineers (IETE), 2009-11-01)This paper describes how a broadband, 1.5 V, 0.85-13.35 GHz low noise amplifier in 0.15 μm 85 GHz PHEMT process is synthesized to simultaneously meet multiple design specifications such as bandwidth, noise figure, power ... -
A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors
(IEEE, 2010-01-11)This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with ... -
Ab-initio calculations of Co-based diluted magnetic semiconductors Cd1-x Cox X (X=S, Se, Te)
(Elsevier B. V., 2010-10)Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic semiconductors composed of II-VI compounds Cd1-x Cox X (X=S, Se, Te) at x=0.25. ... -
Interframe bus encoding technique and architecture for MPEG-4 AVC/H.264 video compression
(IEEE, 2010-05-19)In this paper, we propose an implementation of a data encoder to reduce the switched capacitance on a system bus. Our technique focuses on transferring raw video data for multiple reference frames between off- and on-chip ... -
Nano-silver microcavity enhanced UV GaN light emitter
(Inderscience Enterprises Limited, 2009)We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire ... -
Characterization of intermetallic growth of gold ball bonds on aluminum bond pads
(University of Malaya, 2008)In this paper the intermetallic growth between gold ball bond and aluminum bond pad are studied. It involves thermal aging at 150 °C and 200 °C for various time intervals. The relationship between electrical resistance and ... -
Low-power H.264 video compression architectures for mobile communication
(Institute of Electrical and Electronics Engineers (IEEE), 2009-09)This paper presents a method to reduce the computation and memory access for variable block size motion estimation (ME) using pixel truncation. Previous work has focused on implementing pixel truncation using a fixed-blocksize ... -
Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
(Nano Science and Technology Institute, 2006)Experimental studies of nanowires formation are carried out by using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design ... -
Reproducibility of silicon single electron quantum dot transistor
(Nano Science and Technology Institute, 2006)In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET ... -
Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography
(Nano Science and Technology Institute, 2007)Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ... -
Core nucleus polarization in Λ hypernuclei
(The American Physical Society, 2008-03)The response of the core nucleus to the Λ in a hypernucleus is studied with a local density approximation. This reproduces the energies and radii of the core nuclei as well as the Λ-single particle (s.p.) energies quite ... -
Borophosphosilicate glass (BPSG) reflow characterization for submicron CMOS technology
(Universiti Kebangsaan Malaysia, 2007)This paper involves the planarization of borophosphosilicate glass (BPSG) film using a new recipe for annealing process to improve the borophosphosilicate glass (BPSG) film flatness after reflow. This improvement is for ... -
Design of 100nm single-electron transistor (SET) by 2D TCAD simulation
(Institute of Electrical and Electronics Engineering (IEEE), 2006)One of the great problems in current large-scale integrated circuits (LSIs) is increasing power dissipation in a small silicon chip. Single-electron transistor (SET) which operate by means of one-by-one electron transfer, ... -
An estimation of the energy and exergy efficiencies for the energy resources consumption in the transportation sector in Malaysia
(Elsevier Ltd., 2007-08)The purpose of this work is to apply the useful energy and exergy analysis models for different modes of transport in Malaysia and to compare the result with a few countries. In this paper, energy and exergy efficiencies ... -
Effect of alignment mark architecture on alignment signal behavior in advanced lithography
(Universiti Malaya, 2007)Alignment mark architecture is divided into two types, which depending on where the mark is defined. Alignment mark that is defined through the contact masking steps is known as contact mark and alignment mark that is ... -
A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
(Elsevier B.V., 2007-05)The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, ... -
The characterization of power supply noise for optical mouse sensor
(Institute of Electrical and Electronics Engineering (IEEE), 2006)The induced power supply noise (sinusoidal waveform) that injected to Vdd pin will cause unwanted spike at the positive amplitude and negative amplitude to the DC input voltage. At certain limit this spike will cause the ... -
Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
(IOP Publishing Ltd, 2008-01-29)The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ... -
Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD
(Institute of Electrical and Electronics Engineering (IEEE), 2006-07)Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by ... -
Nano patterning of cone dots and nano constrictions of negative e-beam resist for single electron transistor fabrication
(Springer New York, 2007-12)We present an optimization of nano dot of negative tone e-beam resist which is a very important step in single electron transistor fabrication process. The optimum design of dot and nano constriction plays a significant ...