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    • Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review 

      Louis, Gerrer; Ding, J.; Amoroso, S. M.; Adamu-Lema, F.; R., Hussin; Reid, D.; Millar, C.; Asenov, A. (Elsevier, 2014-04)
      In this paper we summarize the impact of Statistical Variability (SV) on device performances and study the impact of oxide trapped charges in combination with SV. Traps time constants are described and analysed in combination ...