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dc.contributor.authorSutikno, Madnasri
dc.contributor.authorUda, Hashim
dc.contributor.authorZul Azhar, Zahid Jamal
dc.date.accessioned2009-08-07T07:47:50Z
dc.date.available2009-08-07T07:47:50Z
dc.date.issued2008-01-29
dc.identifier.citationNanotechnology, vol.19 (7), 2008, pages 1-6.en_US
dc.identifier.issn0957-4484
dc.identifier.urihttp://iopscience.iop.org/0957-4484/19/7/075302/?ejredirect=.iopscience
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/6699
dc.descriptionLink to publisher's homepage at http://iopscience.iop.orgen_US
dc.description.abstractThe control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using a systematic oxidation technique known as the pattern-dependent oxidation (PADOX) process. For comparison, two oxidation processes using conventional furnace and rapid thermal processing (RTP) were used. The oxidation temperature for both oxidation processes was set at 1000°C and the oxygen flow rate in the furnace was set at 1 l min-1. The nanostructures were characterized using AFM, SEM and TEM to determine the quality and the stoichiometry of the Si QDs and the oxides. The oxidation rate using a furnace is 0.36 nm s-1, significantly lower than the RTP value which is 2.16 nm s-1. Meanwhile, the oxygen contents in SiO2 grown by furnace and RTP are approximately the same.en_US
dc.language.isoenen_US
dc.publisherIOP Publishing Ltden_US
dc.subjectSilicon dioxideen_US
dc.subjectQuantum dotsen_US
dc.subjectTransistorsen_US
dc.subjectOxidationen_US
dc.subjectQuantum electronicsen_US
dc.subjectSemiconductorsen_US
dc.titleFabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation processen_US
dc.typeArticleen_US


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