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    Uninterruptible power supply monitoring system with Visual Basic 

    Sohiful Anuar, Zainol Murad; Mohd Nazrin, Md Isa; Norazeani, Abdul Rahman (Universiti Malaysia Perlis, 2006-12-29)
    In industrial process today, reliability of equipment is very important. Power supply must be able to cater the need of industrial process. In case of power failure, backup power supply system must be able to support the ...
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    The surface characteristics of under bump metallurgy (UBM) in electroless nickel immersion gold (ENIG) deposition 

    Mohd Khairuddin, Md Arshad; Ibrahim, Ahmad; Azman, Jalar; Ghazali, Omar (Elsevier Science, 2006)
    This paper discusses on the surface characteristics of each of the seven set-up process steps prior completion of under bump metallurgy (UBM) deposition. The Atomic Force Microscopy (AFM) and Scanning Electron Microscopy ...
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    A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation 

    Madnarski Sutikno; Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr. (Elsevier B.V., 2007-05)
    The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, ...
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    FPGA based SPWM Bridge Inverter 

    Mohd Nazrin, Md Isa; Muhammad Imran, Ahmad; Sohiful Anuar, Zainol Murad; Mohd Khairuddin, Md Arshad (Science Publications, 2007)
    This study presents methodology to generate sinusoidal pulse width modulation (SPWM) signal using Field Programmable Gate Array, FPGA technology. We discussed the unipolar switching scheme and the methodology to generate ...
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    Core nucleus polarization in Λ hypernuclei 

    Usmani, Q. N.; Bodmer, A. R.; Zaliman, Sauli (The American Physical Society, 2008-03)
    The response of the core nucleus to the Λ in a hypernucleus is studied with a local density approximation. This reproduces the energies and radii of the core nuclei as well as the Λ-single particle (s.p.) energies quite ...
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    GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer 

    Chuah, Lee Siang; Z., Hassan; H., Abu Hassan; Naser Mahmoud, Ahmed (Elsevier B.V., 2009-07)
    In this work, GaN films were grown on three-inch silicon substrates by plasma-assisted molecular beam epitaxy (PAMBE) with AlN (about 200 nm) as the buffer layer. Finally, a thin AlN cap layer (50 nm) was grown on the GaN ...
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    Under Bump Metallurgy (UBM)-a technology review for flip chip packaging 

    Mohd Khairuddin Md Arshad; Uda Hashim; Muzamir Isa (Department of Mechanical Engineering, University Malaya, 2007)
    Flip chip packaging technology has been utilized more than 40 years ago and it still experiencing an explosives growth. This growth is driven by the need for high performance, high volume, better reliability, smaller size ...
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    The characterization of Al Bond pad surface treatment in Electroless Nickel Immersion Gold (ENIG) deposition 

    Mohd Khairuddin, Md Arshad; Azman, Jalar; Ibrahim, Ahmad; Ghazali, Omar (Science Publications, 2007)
    This study reports a number of experiments that were designed to characterize aluminum bond pad surfaces prior to electroless nickel immersion gold (ENIG). In the ENIG process, aluminum bond pads need special treatment ...
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    The effects of multiple zincation process on Aluminum Bond Pad surface for Electroless Nickel Immersion Gold deposition 

    Mohd Khairuddin, Md Arshad; Ibrahim, Ahmad; Azman, Jalar; Ghazali, Omar; Uda, Hashim (American Society of Mechanical Engineers (ASME), 2006-09)
    This paper reports the effects of a multiple zincation processon the Al bond pad surface prior to electroless nickel immersion gold deposition. The study of multiple zincation comprises the surface topogtaphy and morphology ...
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    Effect of alignment mark architecture on alignment signal behavior in advanced lithography 

    Normah, Ahmad; Uda, Hashim; Mohd Jeffery, Manaf; Kader Ibrahim, Abdul Wahab (Universiti Malaya, 2007)
    Alignment mark architecture is divided into two types, which depending on where the mark is defined. Alignment mark that is defined through the contact masking steps is known as contact mark and alignment mark that is ...
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    AuthorUda, Hashim (16)Mohd Khairuddin, Md Arshad (9)Sohiful Anuar, Zainol Murad (5)Zul Azhar, Zahid Jamal (5)Azman, Jalar (4)... View MoreSubjectElectroless nickel immersion gold (ENIG) (5)Transistors (5)Under bump metallurgy (UBM) (4)Zincation (4)Alignment mark (3)... View MoreDate Issued2009 (11)2008 (6)2007 (12)2006 (15)2005 (4)

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