Now showing items 1-2 of 2

    • GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer 

      Chuah, Lee Siang; Z., Hassan; H., Abu Hassan; Naser Mahmoud, Ahmed (Elsevier B.V., 2009-07)
      In this work, GaN films were grown on three-inch silicon substrates by plasma-assisted molecular beam epitaxy (PAMBE) with AlN (about 200 nm) as the buffer layer. Finally, a thin AlN cap layer (50 nm) was grown on the GaN ...
    • Nano-silver microcavity enhanced UV GaN light emitter 

      Naser Mahmoud, Ahmed; Zaliman, Sauli; Uda, Hashim; Zul Azhar, Zahid Jamal (Inderscience Enterprises Limited, 2009)
      We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire ...