Browsing School of Microelectronic Engineering (Articles) by Subject "Films"
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GaN Schottky barrier photodiode on Si (1 1 1) with low-temperature-grown cap layer
(Elsevier B.V., 2009-07)In this work, GaN films were grown on three-inch silicon substrates by plasma-assisted molecular beam epitaxy (PAMBE) with AlN (about 200 nm) as the buffer layer. Finally, a thin AlN cap layer (50 nm) was grown on the GaN ...