Browsing School of Microelectronic Engineering (Articles) by Author "mohd.khairuddin@unimap.edu.my"

Now showing items 1-5 of 5

    • Characterization of intermetallic growth of gold ball bonds on aluminum bond pads 

      Mohd Khairuddin, Md Arshad; Lim, Moy Fung; Mohammad Nuzaihan Md. Noor; Uda, Hashim (University of Malaya, 2008)
      In this paper the intermetallic growth between gold ball bond and aluminum bond pad are studied. It involves thermal aging at 150 °C and 200 °C for various time intervals. The relationship between electrical resistance and ...

    • Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs 

      Mohd Khairuddin, Md Arshad, Dr.; Raskin, Jean-Pierre, Prof.; Kilchytska, Valeriya, Dr.; Andrieu, François, Dr.; Scheiblin, Pascal; Faynot, O.; Flandre, Denis, Prof. (Institute of Electrical and Electronics Engineers (IEEE), 2012-01)
      This paper analyzes and models the drain-induced barrier lowering (DIBL) for ultrathin silicon body and ultrathin silicon body and thin buried oxide (UTBB) SOI MOSFETs. The channel depth appears as the primary factor in ...

    • Impact of self-heating and substrate effects on small-signal output conductance in UTBB SOI MOSFETs 

      Makovejev, Sergej; Raskin, Jean Pierre; Mohd Khairuddin, Md Arshad, Dr.; Flandre, Denis; Olsen, Sarah H.; Andrieu, François; Kilchytska, Valeria I. (Elsevier Ltd, 2012-05)
      The frequency variation of the output conductance in ultra-thin body with ultra-thin BOX (UTBB) SOI MOSFETs without a ground plane is studied through measurements and two-dimensional simulations. Two effects causing the ...

    • Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit 

      Kilchytska, Valeria I.; Mohd Khairuddin, Md Arshad; Makovejev, Sergej; Olsen, Sarah H.; Andrieu, Francois; Poiroux, Thierry; Faynot, Olivier; Raskin, Jean Pierre; Flandre, Denis (Elsevier Ltd., 2012-04)
      In this paper, we analyze, for the first time to our best knowledge, the perspectives of ultra-thin body and ultra-thin BOX (UTBB) SOI CMOS technology for analog applications. We show that UTBB is a promising contender ...

    • UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime 

      Mohd Khairuddin, Md. Arshad; Makovejev, Sergej; Olsen, Sarah H.; Andrieu, F.; Raskin, Jean Pierre; Flandre, Denis; Kilchytska, Valeriya I. (Elsevier Ltd., 2013)
      In this work we investigate the effect of ground plane (GP) on analog figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) SOI MOSFETs. Based on experimental devices, both n- and p-type GP configurations ...