Browsing School of Microelectronic Engineering (Articles) by Author "Yoshida, K."

Now showing items 1-3 of 3

    • A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors 

      Sohiful Anuar, Zainol Murad; Pokharel, R. K.; Kanaya, H.; Yoshida, K. (IEEE, 2010-01-11)
      This paper describes the design of a 2.4-GHz CMOS Class E single-ended power amplifier (PA) for wireless applications in TSMC 0.18-μm CMOS technology. The Class E PA proposed in this paper realizes all inductors with ...

    • An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications 

      Sohiful Anuar, Zainol Murad; Pokharel, R. K.; Galal, A. I. A.; Sapawi, R.; Kanaya, H.; Yoshida, K. (Institute of Electrical and Elctronics Engineering (IEEE), 2010-09)
      This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain ...

    • High efficiency, good linearity, and excellent phase linearity of 3.1-4.8 GHz CMOS UWB PA with a current-reused technique 

      Sohiful Anuar, Zainol Murad; Pokharel, R. K.; Sapawi, R.; Kanaya, H.; Yoshida, K. (Institute of Electrical and Electronics Engineers (IEEE), 2010-08)
      This paper describes the design of 3.1 to 4.8 GHz CMOS power amplifier (PA) for ultra-wideband (UWB) applications using 0.18-m CMOS technology. The UWB PA proposed here employs cascode topology with a currentreused technique ...