Browsing School of Microelectronic Engineering (Articles) by Author "Uda, Hashim"
Now showing items 1-16 of 16
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Alignment mark architecture effect on alignment signal behavior in advanced lithography
Normah, Ahmad; Uda, Hashim; Mohd Jeffrey, Manaf; Kader Ibrahim, Abdul Wahab (Institute of Electrical and Electronics Engineering (IEEE), 2006)The downscaling of CMOS technology becomes a challenge to the scanner alignment system since overlay and alignment accuracy becomes tighter. Such a tight overlay requirement requires a very stable alignment performance. A ... -
Borophosphosilicate glass (BPSG) reflow characterization for submicron CMOS technology
Uda, Hashim; Ramzan, Mat Ayub; Nik Hazura, Nik Hamat (Universiti Kebangsaan Malaysia, 2007)This paper involves the planarization of borophosphosilicate glass (BPSG) film using a new recipe for annealing process to improve the borophosphosilicate glass (BPSG) film flatness after reflow. This improvement is for ... -
Characteristics of Serial Peripheral Interfaces (SPI) timing parameters for optical mouse sensor
Mohd Khairuddin, Md Arshad; Uda, Hashim; Choo, C.M. (Institute of Electrical and Electronics Engineering (IEEE), 2006)In this paper we report the characterizations results of Serial Peripheral Interface (SPI) timing parameters for optical mouse sensor. SPI is an interface that facilitates the transfer of synchronous serial data. It supports ... -
Characterization of intermetallic growth of gold ball bonds on aluminum bond pads
Mohd Khairuddin, Md Arshad; Lim, Moy Fung; Mohammad Nuzaihan Md. Noor; Uda, Hashim (University of Malaya, 2008)In this paper the intermetallic growth between gold ball bond and aluminum bond pad are studied. It involves thermal aging at 150 °C and 200 °C for various time intervals. The relationship between electrical resistance and ... -
The characterization of power supply noise for optical mouse sensor
Mohd Khairuddin, Md Arshad; Uda, Hashim; Ming, Choo Chew (Institute of Electrical and Electronics Engineering (IEEE), 2006)The induced power supply noise (sinusoidal waveform) that injected to Vdd pin will cause unwanted spike at the positive amplitude and negative amplitude to the DC input voltage. At certain limit this spike will cause the ... -
Characterization of robust alignment mark to improve alignment performance
Normah, Ahmad; Uda, Hashim; Mohd Jefrey, Manaf; Kader, Ibrahim (Institute of Electrical and Electronics Engineering (IEEE), 2006)Overlay requirement is one of the biggest obstacles in achieving a very small feature. With the continued growth of small feature size, overlay requirement becomes tighter. Such a tight requirement requires a very high ... -
Design of 100nm single-electron transistor (SET) by 2D TCAD simulation
Amiza, Rasmi; Uda, Hashim; Awang Mat, Abd F (Institute of Electrical and Electronics Engineering (IEEE), 2006)One of the great problems in current large-scale integrated circuits (LSIs) is increasing power dissipation in a small silicon chip. Single-electron transistor (SET) which operate by means of one-by-one electron transfer, ... -
Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography
Uda, Hashim; Sutikno, Madnasri; Zul Azhar, Zahid Jamal (Nano Science and Technology Institute, 2007)Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ... -
Effect of alignment mark architecture on alignment signal behavior in advanced lithography
Normah, Ahmad; Uda, Hashim; Mohd Jeffery, Manaf; Kader Ibrahim, Abdul Wahab (Universiti Malaya, 2007)Alignment mark architecture is divided into two types, which depending on where the mark is defined. Alignment mark that is defined through the contact masking steps is known as contact mark and alignment mark that is ... -
The effects of multiple zincation process on Aluminum Bond Pad surface for Electroless Nickel Immersion Gold deposition
Mohd Khairuddin, Md Arshad; Ibrahim, Ahmad; Azman, Jalar; Ghazali, Omar; Uda, Hashim (American Society of Mechanical Engineers (ASME), 2006-09)This paper reports the effects of a multiple zincation processon the Al bond pad surface prior to electroless nickel immersion gold deposition. The study of multiple zincation comprises the surface topogtaphy and morphology ... -
An estimation of the energy and exergy efficiencies for the energy resources consumption in the transportation sector in Malaysia
Saidur, R.; Munavvar, Abdul Sattar; Masjuki, H. H.; Ahmed, S.; Uda, Hashim (Elsevier Ltd., 2007-08)The purpose of this work is to apply the useful energy and exergy analysis models for different modes of transport in Malaysia and to compare the result with a few countries. In this paper, energy and exergy efficiencies ... -
Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
Sutikno, Madnasri; Uda, Hashim; Zul Azhar, Zahid Jamal (IOP Publishing Ltd, 2008-01-29)The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ... -
Nano patterning of cone dots and nano constrictions of negative e-beam resist for single electron transistor fabrication
Sutikno, Madnasri; Uda, Hashim; Zul Azhar, Zahid Jamal (Springer New York, 2007-12)We present an optimization of nano dot of negative tone e-beam resist which is a very important step in single electron transistor fabrication process. The optimum design of dot and nano constriction plays a significant ... -
Nano-silver microcavity enhanced UV GaN light emitter
Naser Mahmoud, Ahmed; Zaliman, Sauli; Uda, Hashim; Zul Azhar, Zahid Jamal (Inderscience Enterprises Limited, 2009)We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire ... -
Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
Mohammad Nuzaihan, Md Nor; Uda, Hashim; Nur Hamidah, Abdul Halim; Bajuri, S. N M (Nano Science and Technology Institute, 2006)Experimental studies of nanowires formation are carried out by using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design ... -
Reproducibility of silicon single electron quantum dot transistor
Uda, Hashim; Sutikno, Madnarski (Nano Science and Technology Institute, 2006)In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET ...