Browsing School of Microelectronic Engineering (Articles) by Author "Reshak, Ali H."
Now showing items 1-3 of 3
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Ab-initio calculations of Co-based diluted magnetic semiconductors Cd1-x Cox X (X=S, Se, Te)
Saeed, Y.; Nazir, S.; Shaukat, A.; Reshak, Ali H. (Elsevier B. V., 2010-10)Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic semiconductors composed of II-VI compounds Cd1-x Cox X (X=S, Se, Te) at x=0.25. ... -
Electronic properties of orthorhombic LiGaS2 and LiGaSe 2
Reshak, Ali H.; Auluck, S.; Kityk, I. V.; Yarub K.A, Al-Douri; Khenata, R.; Bouhemadou, A. (Springer Berlin/Heidelberg, 2009)We report theoretical calculations of the band structure and density of states for orthorhombic LiGaS2 (LGS) and LiGaSe2 (LGSe). These calculations are based on the full potential linear augmented plane wave (FP-LAPW) ... -
FP-LAPW investigation of structural, electronic, linear and nonlinear optical properties of ZnIn2Te4 defect-chalcopyrite
Ayeb, Y.; Ouahrani, T.; Khenata, R.; Reshak, Ali H.; Rached, D.; Bouhemadou, A.; Arrar, A. (Elsevier B. V., 2010-12)A theoretical study of structural, electronic, linear and nonlinear optical properties of ZnIn2Te4 defect-chalcopyrite is presented using the full-potential linearized augmented plane-wave (FP-LAPW) method. The exchange ...