Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Issue Date
Now showing items 1-20 of 527
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Molecular dynamics simulation study of structural, elastic and thermodynamic properties of tin below 286 K
(Universiti Malaysia Perlis, 2008)Molecular-dynamics simulation has been used to investigate structural, elastic and thermodynamic properties of tin in the temperature range from 200K up to 286.36K. Calculations are carried out using the inter-atomic ... -
Study of intersubband transitions in Si1-xGex/Si quantum wells using 14-band k⋅p model
(Universiti Malaysia Perlis, 2008)Optical intersubband transitions (ISTs) for both in-plane polarization (TE) and normalto- plane polarization (TM) in p-type Si1-xGex/Si multiple quantum wells (MQWs) are investigated using 14-band k⋅p model combined with ... -
Electronic structure, magnetic and Fermi surface calculations of heavy-fermions superconductors compounds based on Nb3Sn
(Universiti Malaysia Perlis, 2008)We report a theoretical investigation of the electronic structures and Fermi surface of the heavy-fermion superconductors Nb3Sn. The electronic structures are investigated ab-initio on the basis of full-potential local ... -
SOI based nanowire single-electron transistors: design, simulation and process development
(Universiti Malaysia Perlis, 2008)One of the great problems in current large-scale integrated circuits is increasing power dissipation in a small silicon chip. Single-electron transistors which operate by means of one-by-one electron transfer, is relatively ... -
First-principles study of cubic BxGa1-xN alloys
(Universiti Malaysia Perlis, 2008)We present first-principles calculations of the structural and electronic properties of cubic for different concentrations x of ternary alloy BxGa1-x N. The computational method is based on the full-potential linearized ... -
FP-LAPW calculations of ground state properties for AlN, GaN and InN compounds
(Universiti Malaysia Perlis, 2008)We present first-principals all-electrons total-energy calculations concerning structural and electronic properties for the group III-V zinc-blend-like compounds AlN, GaN and InN using the full-potential linearized augmented ... -
Valence electron correlation energy embracing the diamond-lattice materials C through Sn
(Universiti Malaysia Perlis, 2008)By combining a recent result of March and Matthai for the energy gap G with a model of Rey and Savin, the correlation energy ec of the valence electrons embracing C, Si, Ge and Sn can be estimated. While Sn is thereby ... -
Studying the effect of X-ray radiation on the electrical properties of diodes 1N1405
(Universiti Malaysia Perlis, 2008)The diode 1N1405 type silicon is subjected to different levels of energy and time irradiation. We have about three times; at every time we have measured the forward and reverse bias voltage of the diode to know what is ... -
Swift heavy ion effects in gallium nitride
(Universiti Malaysia Perlis, 2008)GaN layers were irradiated at room temperature with swift heavy ions. AFM (atomic force microscopy) images of specimens irradiated under grazing incidence show tracks. With 74 MeV Kr, the contrast is very faint unlike for ... -
Metamagnetic behavior in Fe3Si and Fe3A1
(Universiti Malaysia Perlis, 2008)The electronic properties of Fe3Si and Fe3Al in the cubic DO3 structure are calculated within the local spin density approximation. There are two types of Fe atomic positions, one with tetrahedral symmetry ([A,C]) and one ... -
Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method
(Universiti Malaysia Perlis, 2009)The design of optoelectronic devices fabricated from III-Nitride materials is aided by knowledge of refractive index and absorption coefficient of these materials .The optical properties of Al0.11Ga0.89N, Al0.03Ga0.97N, ... -
Application of synopsys' taurus TCAD in developing CMOS fabrication process modules
(Universiti Malaysia Perlis, 2009)Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and devics operation. TCAD has two major functions namely process simulation and device simulation. It performs the semiconductor ... -
Structural and optical properties of chemical deposition CdS thin films
(Universiti Malaysia Perlis, 2009)CdS thin films have been prepared by chemical bath deposition (CBD) method on glass substrates at solution temperature 80 oC. Cadmium acetate was used as a source of Cd+ 2 and thiourea as a source S-2. After three times ... -
Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
(Universiti Malaysia Perlis, 2009)In this paper we report on the effect of rapid thermal annealing (RTA) on the characteristics of diffused crystalline p-n Si one-dimensional (1-D) position sensitive detector (PSD). The Si-PSDs are made with planer technology ... -
Electrical and structural properties of flash evaporation InSb thin films
(Universiti Malaysia Perlis, 2009)Indium antimonide (InSb) thin films were prepared on glass substrates by flash evaporation technique of a stoichiometric bulk of InSb at different substrate temperatures Ts= (300,320,350)°C. Films thickness were in the ... -
Multilayer antireflection coatings model for red emission of silicon for optoelectronic applications
(Universiti Malaysia Perlis, 2009)A model, based on the Transfer Matrix Method (TMM) of multilayer is used to evaluate the transmittance at the central wavelength 720 nm of Si when using Ge, SiO2 nd Si as multilayer thin film coatings. In this study, the ... -
Description of yrast states and deformation changes in tantalum nuclei (Ta)
(Universiti Malaysia Perlis, 2009)The gamma - ray studies of 167Ta nucleus will be studied and several rotational decay sequences are identified. In these nuclei values for the effective moment of the inertia are suggested which reproduces the energies of ... -
Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes
(Universiti Malaysia Perlis, 2009)The current-voltage (I-V) and capacitance voltage (C-V) characteristics of Al/n-GaAs and Al/p-GaAs diodes on GaAs substrate treated by Ru3+ ions are investigated and compared with characteristics of GaAs diodes on GaAs ... -
Dielectric and electric investigations on Rb1-x(NH4)xHSO4 solid solution
(Universiti Malaysia Perlis, 2009)Dielectric investigations in the temperature and frequency ranges 150 - 450K and 102 - 105Hz respectively show that the compositions x = 0.2 and x = 0.4 of the solid solution Rb1-x(NH4)xHSO4 are ferroelectric below ... -
Electronic and optical properties of the express purified SWCNTs produced by HiPCO process
(Universiti Malaysia Perlis, 2009)Single-walled carbon nanotubes have been synthesized by a gas-phase CO decomposition (HiPCO) process, involving high-pressure disproportionation of CO as carbon feedstock and catalytic iron particles were obtained from ...