Fabrication and simulation of PNP Bipolar transistor based on Spin On Dopant technique and Electrical characterization

Abstract

In this project, the fabrication and simulation of pnp transistor was performed. From fabrication process, the electrical characteristic and sheet resistance of the device was observed by 4 point probe measurement. The electrical characterization of this transistor is base on common base configuration and common emitter configuration. These output characteristic curves can be used to examine how a transistor will function over a dynamic range. The sheet resistance is need to know the details of the diffused layer profile. In diffused layers, resistivity is a strong function of depth. From simulation process, the doping profiles and electrical characterization was analyzed using TCAD software. The transistor was simulated by using SUPREM4 driver which can model the device in one or two dimensional structure. The one dimensional doping profiles was analyzed by using different energy level in diffusion. Then, the medici driver was used to perform the electrical characterization of this transistor. It was performed the current collector and base collector in Gummel plotted. The report concludes that while the pnp transistor should be fabricate and simulate. It is more to produce the device based on two methods that is fabrication process or simulation process and compared both of the result.