SOI Single-Electron Transistors (SET) design and process development
Date
2005-05-18Author
Amiza, Rasmi
Mohammad Nuzaihan, Md Nor
Uda, Hashim
Metadata
Show full item recordAbstract
Single-electron transistor (SET) is attractive devices to use for large-scale integration. SET can be made very small,
dissipate little power, and can measure quantities of charge much faster than MOSFETs. This makes SET would replace
field-effect transistor (FET). In this paper, Electron Beam (EBeam) GDS II Editor Software is utilized to design a mask for
SOI SET fabrication. This system show promising result producing structure at nanometer scale node. Four masks step
are involved namely source/drain & gate mask, Poly-Si gate electrode mask, contact mask, and metallization mask. SOI SET
device design with a gate length and gate width of approximately 0.1μm and 0.02μm respectively is generated for fabrication
process. In addition, the processes involve in SOI SET fabrication are also discussed.
Collections
- Conference Papers [2534]
- Uda Hashim, Prof. Ts. Dr. [242]
Related items
Showing items related by title, author, creator and subject.
-
'Predicted' relative electronics export performance in 2013
Credit Suisse estimates (Credit Suisse estimates, 2013) -
Internet of thing based indoor electronic billboard (IEB)
Nurain Akmalia, Jumadi (Universiti Malaysia Perlis (UniMAP)School of Computer and Communication Engineering, 2016-06)Advertisement is the best way to communicate and interact to the customers which helps to aware and draw the attention of prospective customers. For an advertisement to be effective,the information need to be delivered ... -
Samsung Electronics earnings
Samsung (Samsung, 2012)