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Now showing items 11-17 of 17
Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
(Universiti Malaysia Perlis, 2008-03)
This project is about the usage of Technology Computer Aided Design (TCAD) in
order to construct NMOS transistor with gate length 0.13 µm. TCAD is use in computer
simulation as process modelling and device operation. ...
Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method
(Universiti Malaysia Perlis, 2008-03)
Studies of the interaction of O2 and O with Si(100) at a fundamental level are reviewed.
Both atomic and molecular chemisorbed species have been found on these surfaces. STM studies have given a great deal of information ...
Optimization of Nitride deposition process using Taguchi method
(Universiti Malaysia Perlis, 2008-04)
The process of plasma enhanced chemical vapor deposition silicon nitride film which is used as barrier layer for the doped oxide in premetal dielectric (PMD) application and optimized using Design of Experiment (DOE) ...
Fabrication and simulation of PNP Bipolar transistor based on Spin On Dopant technique and Electrical characterization
(Universiti Malaysia Perlis, 2008-04)
In this project, the fabrication and simulation of pnp transistor was performed.
From fabrication process, the electrical characteristic and sheet resistance of the device was observed by 4 point probe measurement. The ...
Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS)
(Universiti Malaysia Perlis, 2008-03)
Many experiments on the mechanics of nanostructures require the creation of rigid
clamps at specific locations. In this work, electron beam induced deposition (EBID) has been used to deposit carbon films that are similar ...
Fabrication and characterization of Barium Strontium Titanate (BA1-XSRXTIO3 BST) for heat sensor application
(Universiti Malaysia Perlis, 2008-04)
Ferroelectric Barium Strontium Titanate (BST) thin films were successfully prepared by wet chemical deposition or sol-gel method and characterized using SPA, AFM, and sensing properties. The BST thin film was fabricated ...
The study of the effect of MOS transistor scaling on the critical device parameters
(Universiti Malaysia Perlis, 2007-04)
Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser ...