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Electrical characterization of 0.15µm CMOS Transistor using TSUPREM-4 and MEDICI
(Universiti Malaysia Perlis, 2008-04)
Physical and electrical characteristics of 0.153m Complementary Metal Oxide Semiconductor (CMOS) were studied. Fabrications of the devices were done by
TSUPREM-4 simulator and electrical characteristics extraction will ...
Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
(Universiti Malaysia Perlis, 2008-04)
This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and ...
Study of the temperature effect on thickness and surface roughness of SiO2
(Universiti Malaysia Perlis, 2008-04)
Oxidation is one of the most important thermal processes in semiconductor fabrication. The profile of oxide layer is varied to its different applications. Many factors can affect the profile of the SiO2 layer. In this ...
Effect of different dielectric materials for Ultrathin Oxide
(Universiti Malaysia Perlis, 2008-04)
This paper I want to describe the reliability study of the effect of different dielectric materials for ultrathin oxide. The alternative high–k gate dielectrics are to provide a substantially thicker (physical thickness) ...
Ultra low power 8-bit microcontroller using Super Cut-Off CMOS (SCCMOS)
(Universiti Malaysia Perlis, 2007-04)
As the advances of VLSI technology, low power design has become an important topic in
VLSI design. Scaling down supply voltage is an effective way for power reduction because
of its quadratic relationship to dynamic ...
The influence of the accelerating voltages on the growth of the square structure during Electron Beam Induced Deposition (EBID) method
(Universiti Malaysia Perlis, 2008-04)
Electron beam induced deposition (EBID) is a method for high-resolution direct material deposition from the gas phase in the Scanning Electron Microscopy (SEM) onto
a substrate. In this project, EBID method has been used ...
Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
(Universiti Malaysia Perlis, 2008-03)
Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic
structure. The diffusion process is a method to control ...
Design and analysis of Floating Point divider
(Universiti Malaysia Perlis, 2008-04)
As the advances of VLSI technology, low power design has become an important topic in
VLSI design. Scaling down supply voltage is an effective way for power reduction because of its quadratic relationship to dynamic power. ...
Improvement of SiGe HBT Design and Technology Performance using Device Simulation
(Universiti Malaysia Perlis, 2007-04)
Simulation of the effect of various design parameters on the performance of the HBT is
essential for obtaining the optimized design. This is based on the requirement for a reliable computation of the HBT performance. ...
Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
(Universiti Malaysia Perlis, 2008-04)
Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic ...