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Negative Pattern Scheme (NPS) design for nanowire formation using scanning electron microscope based electron beam lithography technique
(Trans Tech Publications, 2014)
In this work, we report the used of Negative Pattern Scheme (NPS) by Electron Microscope Based Electron Beam Lithography (EBL) Technique in connection with scanning electron microscope (SEM) for creating extremely fine ...
Fabrication of silicon nanowires by electron beam lithography and thermal oxidation size reduction method
(Trans Tech Publications, 2014)
A simple method for the fabrication of silicon nanowires using Electron Beam Lithography (EBL) combined with thermal oxidation size reduction method is presented. EBL is used to define the initial silicon nanowires of ...
Application of e-beam lithography for nanowire development
(Universiti Malaysia Perlis (UniMAP), 2010-10-16)
Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly ...
Design and fabrication of silicon nanowire based sensor
(Electrochemical Science Group (ESG), 2013)
This paper reports the process development of silicon nanowires sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. By using silicon-on-insulator (SOI) wafer as a ...
Cost Effective Negative Plenum Cleanroom for Microelectronic Engineering undergraduate
(Kolej Universiti Kejuruteraan Utara Malaysia, 2005)
The Negative Plenum Cleanroom which is design and built by KUKUM is primarily used for the teaching of the undergraduate microelectronic course. The cleanroom is approximately 115m² in size. The level of cleanliness in the ...
SOI Single-Electron Transistors (SET) design and process development
(Kolej Universiti Kejuruteraan Utara Malaysia, 2005-05-18)
Single-electron transistor (SET) is attractive devices to use for large-scale integration. SET can be made very small,
dissipate little power, and can measure quantities of charge much faster than MOSFETs. This makes SET ...
PMMA characterization and optimization for Nano Structure formation
(Kolej Universiti Kejuruteraan Utara Malaysia, 2005-05-18)
The limitations imposed on optical lithography by the wavelength of light have been overcome using electron lithography. Electron lithography offers high resolution
because of the small wavelength of the 10-50 keV electrons ...
Semiconductor Nanowire
(Kementerian Pengajian Tinggi Malaysia (KPTM), 2007-08-10)
Semiconductor Nanowire represents an important and broad class of nanometer scale wire structure. Semiconductor Nanowire is a wire of dimension of the order of a nanometer or 10-9 meters. It is the one thousand times ...
Pattern designed for combination of optical lithography and electron beam lithography
(Universiti Malaysia Pahang, 2009-06-20)
In this paper the fabricated pattern of
nanometer and micrometer structures created with
electron beam lithography (EBL) and optical
lithography on silicon on insulator (SOI) material
is presented. The resist used to ...
Affordable and Effective Microelectronic Engineering Teaching Package for Undergraduate Programme
(International Exhibition of Inventions, 2006-04-05)
The package, which is fully designed developed, using KUKUM in house expertise, is the first teaching laboratory that is purposely built for undergraduate microelectronic program in Malaysia.