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dc.contributor.authorShahrir, R. Kasjoo
dc.contributor.authorArun, K. Singh
dc.contributor.authorBalocco, Claudio
dc.contributor.authorAimin, Song
dc.date.accessioned2022-05-11T03:35:19Z
dc.date.available2022-05-11T03:35:19Z
dc.date.issued2021-12
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.14 (Special Issue), 2021, pages 53-58en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/75203
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractA unipolar nanodiode known as the self-switching diode has been demonstrated as a room-temperature terahertz detector, with its noise-equivalent-power value comparable to those of the state-of-the-art Schottky diodes. Here, we study its performance at elevated temperatures and show an unusual reduction in low-frequency noise, which may be useful for practical applications. The experiments suggest that the increased thermionic emissions result in the reduced device resistance and hence the lowered noise. The observed noise behavior appears to be in good agreement with Hooge’s mobility fluctuation theory.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subject.otherDiodeen_US
dc.subject.otherHooge’s mobility fluctuation theoryen_US
dc.subject.otherLow-frequency noiseen_US
dc.titleNoise properties of unipolar nanodiodes at elevated temperaturesen_US
dc.typeArticleen_US
dc.identifier.urlhttp://ijneam.unimap.edu.my
dc.contributor.urlshahrirrizal@unimap.edu.myen_US


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