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dc.contributor.authorMuliana, Tahan
dc.contributor.authorNafarizal, Nayan
dc.contributor.authorSiti Noraiza, Abd Razak
dc.contributor.authorAnis Suhaili, Bakri
dc.contributor.authorZulkifli, Azman
dc.contributor.authorMohd Zainizan, Sahdan
dc.contributor.authorNur Amaliyana, Rahip
dc.contributor.authorAhmad Shuhaimi, Abu Bakar
dc.contributor.authorMohd Yazid, Ahmad
dc.date.accessioned2020-09-28T02:59:48Z
dc.date.available2020-09-28T02:59:48Z
dc.date.issued2020-07
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.13(3), 2020, pages 483-492en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/67712
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractAluminum nitride (AlN) and gallium nitride (GaN) thin films were grown on silicon (Si) substrates using the conventional RF magnetron sputtering plasma deposition system. The growth rate of GaN increased as the deposition power of GaN increased. There was no crystalline peak of GaN observed, since there was no additional substrate heating. However, a highly crystalline AlN was observed and its peak orientations of (001) and (002) changed with the growth of GaN films at various RF discharge powers. The film’s composition analysis using energy-dispersive X-ray spectroscopy (EDS) confirmed the existence of Ga and N in the thin films. AFM results showed that the surface roughness (Ra) of the GaN/AlN thin films increased with increased RF discharge power. FESEM images showed a good agreement with the AFM results, since the grain size increased as the surface roughness increased. The electrical properties studied using Hall effect showed that a low discharge power of GaN led to low resistance, high carrier concentration and low Hall mobility, which are good for devices in optoelectronic applications.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectMagnetron sputtering plasmaen_US
dc.subjectGaN thin filmen_US
dc.subjectAlN thin filmen_US
dc.subjectBlue LEDen_US
dc.titleEffect of discharge power on the properties of GaN thin films on AlN-(002) prepared by magnetron sputtering depositionen_US
dc.typeArticleen_US
dc.identifier.urlhttp://ijneam.unimap.edu.my
dc.contributor.urlnafa@uthm.edu.myen_US


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