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dc.contributor.authorRummana, Matin
dc.contributor.authorBashar, M. S.
dc.contributor.authorMunira, Sultana
dc.contributor.authorAninda Nafis Ahmed
dc.contributor.authorGafur, A.
dc.date.accessioned2018-06-08T03:48:26Z
dc.date.available2018-06-08T03:48:26Z
dc.date.issued2018-04
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.11 (2), 2018, pages 221-232en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/53607
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractThis study aims to deposit different thicknesses of CdS thin films with a variation of deposition time by using chemical bath deposition technique. The aqueous solution of cadmium chloride, ammonium chloride, ammonium hydroxide and thiourea were used During the deposition process. The analysis was done to observe the effect of annealing on structural, optical and electrical properties of the CdS thin films. From the x‐ray diffraction, this helps to confirm the cubic CdS phase formation, with a preferred orientation along (111). The finding indicates that the crystallite size is larger in films when it is deposited with low deposition rate. The crystallite size increased with increasing thickness and decreased after annealing. After annealing, the mobility and carrier concentration of the CdS thin films of different thicknesses is increasing and the resistivity decreasing. This study showed that the crystal structure, band gap, Urbach energy and electrical properties of CdS thin films can be changed when Cds thin films experienced annealing.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectCds Thin Filmen_US
dc.subjectChemical Bath Depositionen_US
dc.subjectAnnealing Effecten_US
dc.subjectXRDen_US
dc.subjectBand Gapen_US
dc.titleAnnealing Effects on the Structural, Optical and Electrical Properties of Chemically Deposited CdS Thin Films using NH4Cl Complexing Agenten_US
dc.typeArticleen_US
dc.contributor.urlbashar@agni.comen_US


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