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dc.contributor.authorKarthik, R.
dc.date.accessioned2017-10-12T04:03:29Z
dc.date.available2017-10-12T04:03:29Z
dc.date.issued2017
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.10 (2), 2017, pages 175-184en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/49944
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.my/en_US
dc.description.abstractThis paper presents a model for capacitance – voltage characteristics of bilayer metal-insulator-metal capacitors. The proposed model accounts for Space charge and Maxwell-Wagner polarization mechanisms. It is observed that the effective dielectric constant of stack is increased due to the accumulation of charges at the interface of high to low conductance materials due to the applied field. The proposed model for capacitance – voltage characteristics shows a good agreement with experimental results by introducing carrier tunneling probability of dielectric stack. It is observed that the Maxwell Wagner polarization is dominant at low frequencies (<10 KHz). This model indicates that the nonlinearity can be suppressed by choosing the similar permittivity dielectric materials for fabrication of multilayer metal insulator metal capacitors.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectAnodizationen_US
dc.subjectBilayeren_US
dc.subjectCapacitance – Voltageen_US
dc.subjectMaxwell-Wagneren_US
dc.subjectMetal- Insulator-Metal Capacitoren_US
dc.titleModelling and characterization of fabricated metal-insulator-metal capacitorsen_US
dc.typeArticleen_US
dc.contributor.urlrayam16@gmail.comen_US


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