Search
Now showing items 1-1 of 1
Effect Irradiation time of Gamma Ray on MSISM (Au/SnO₂/SiO₂/Si/Al) devices using theoretical modeling
(Universiti Malaysia Perlis, 2015)
An experimental and theoretical analysis of the effect of irradiation time to Gamma ray on the SnO₂/n-Si hetero-junction devices have been carried out. The time of exposure to Gamma ray was taken as (t= 0, 50, 100, and 150 ...