Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "InGaN"
Now showing items 1-1 of 1
-
Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application
(Universiti Malaysia Perlis (UniMAP), 2019-01)The main objective of this paper is to investigate the DC and AC performances of GaN/InGaN/GaN Double Gate High Electron Mobility Transistor (DG-HEMT) based on innovative materials III-V in particular III-N materials ...