Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "High-K/Metal gate"
Now showing items 1-1 of 1
-
Virtual fabrication of 14nm gate length n-Type double gate MOSFET
(Universiti Malaysia Perlis (UniMAP), 2023-01)Due to Moore's law, it is that predicted the channel length of a metal-oxide-semiconductor Field Effect Transistor (MOSFET) will tend to shrink from the submicron to the nanoscale size. Thus, precision in the manufacturing ...