Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "GaN"
Now showing items 1-3 of 3
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Effects of Series Resistance and Frequency on the Capacitance/ Conductance –Voltage C/G-V Characteristics of Au/GaN/GaAs and Au/GaAs Diodes
(Universiti Malaysia Perlis (UniMAP), 2018-10)In order to analyze the effect of the presence of the GaN layer and series resistance, the electrical characteristics of the Au/GaAsand Au/GaN/GaAsdiodes are investigated. The study is realized by a nitridation process ... -
Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application
(Universiti Malaysia Perlis (UniMAP), 2019-01)The main objective of this paper is to investigate the DC and AC performances of GaN/InGaN/GaN Double Gate High Electron Mobility Transistor (DG-HEMT) based on innovative materials III-V in particular III-N materials ... -
Performance comparison between sapphire and SiC as substrate for GaN 2D photonic crystal
(Universiti Malaysia Perlis (UniMAP), 2020-12)In this work, we present a structure design L3 cavities of 2D photonic crystal on a triangular photonic crystal lattice on Gallium Nitride (GaN) with two different substrate sapphire and SiC. The designed was simulated ...