Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "AlGaN/GaN"
Now showing items 1-2 of 2
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Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs
(Universiti Malaysia Perlis (UniMAP), 2021-12)In this work, we report on the processing and device characteristics of AlGaN/GaN HEMT devices to investigate the effects of silicon dioxide (SiO2) etching using Fluoroform (CHF3) gas prior to gate metal deposition. Three ... -
The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs
(Universiti Malaysia Perlis (UniMAP), 2021-12)In this work, we report the processing and DC performance of fabricated AlGaN/GaN HEMT devices using 3 different patterned Ohmic contact structures. The types of Ohmic contact patterns used are horizontal, vertical and ...