A., Dhongde; S., Taking; M., Elksne; S., Samanta; A., Ofiare; K., Karami; A., Al-Khalidi; E., Wasige (Universiti Malaysia Perlis (UniMAP), 2021-12)
In this work, we report the processing and DC performance of fabricated AlGaN/GaN HEMT devices using 3 different patterned Ohmic contact structures. The types of Ohmic contact patterns used are horizontal, vertical and ...