Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Author "S., Taking"
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Heavily doped n++ GaN Cap Layer AlN/GaN metal oxide semiconductor high electron mobility transistor
K, Karami; S., Taking; A., Ofiare; A., Dhongde; A., Al-Khalidi; E., Wasige (Universiti Malaysia Perlis (UniMAP), 2021-12)In this work, we report on the processing and device characteristics of n++ GaN/AlN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs). The AlN/GaN structure is capped with a highly doped n++ GaN ... -
Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs
A., Ofiare; S., Taking; K., Karami; A., Dhongde; A., Al-Khalidi; E., Wasige (Universiti Malaysia Perlis (UniMAP), 2021-12)In this work, we report on the processing and device characteristics of AlGaN/GaN HEMT devices to investigate the effects of silicon dioxide (SiO2) etching using Fluoroform (CHF3) gas prior to gate metal deposition. Three ... -
The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs
A., Dhongde; S., Taking; M., Elksne; S., Samanta; A., Ofiare; K., Karami; A., Al-Khalidi; E., Wasige (Universiti Malaysia Perlis (UniMAP), 2021-12)In this work, we report the processing and DC performance of fabricated AlGaN/GaN HEMT devices using 3 different patterned Ohmic contact structures. The types of Ohmic contact patterns used are horizontal, vertical and ...