Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Author "Dash, G. N."
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Analytical Approach Assisted Simulation Study of Si, SiGe, and InP based Bipolar Junction Transistors
Jena, M. R.; Mohapatra, S.; Panda, A. K.; Dash, G. N. (Universiti Malaysia Perlis (UniMAP), 2019-04)This paper presents a comparative study of Si, SiGe and InP based Bipolar Junction Transistors (BJT) with reference to their DC, AC, and RF characteristics. Double diffusion doping profile in each case is used to determine ...