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    Application of e-beam lithography for nanowire development

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    Date
    2010-10-16
    Author
    S. Fatimah, Abd Rahman
    Uda, Hashim, Prof. Dr.
    Mohammad Nuzaihan, Md Nor
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    Abstract
    Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly insufficient. In this paper, the recent development of the silicon nanowire based on electron beam lithography technique is reviewed. EBL technology is a best tool to fabricate patterns having nanometer feature sizes. In this project, the exposure process was carried out by an in-house modified electron beam writing system using JOEL JSM 6460LA SEM integrated with ELPHY Quantum pattern generator. Following an introduction of this technique, the software description, pattern design formation and resist development are separately examined and discussed.
    URI
    http://dspace.unimap.edu.my/123456789/21642
    Collections
    • Conference Papers [2599]
    • Uda Hashim, Prof. Ts. Dr. [243]
    • Mohammad Nuzaihan Md Nor, Associate Professor Dr. [11]

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