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dc.contributor.authorS. Fatimah, Abd Rahman
dc.contributor.authorUda, Hashim, Prof. Dr.
dc.contributor.authorMohammad Nuzaihan, Md Nor
dc.date.accessioned2012-11-06T09:53:28Z
dc.date.available2012-11-06T09:53:28Z
dc.date.issued2010-10-16
dc.identifier.isbn978-967-5760-03-7
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/21642
dc.descriptionInternational Postgraduate Conference On Engineering (IPCE 2010), 16th - 17th October 2010 organized by Centre for Graduate Studies, Universiti Malaysia Perlis (UniMAP) at School of Mechatronic Engineering, Pauh Putra Campus, Perlis, Malaysia.en_US
dc.description.abstractMiniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly insufficient. In this paper, the recent development of the silicon nanowire based on electron beam lithography technique is reviewed. EBL technology is a best tool to fabricate patterns having nanometer feature sizes. In this project, the exposure process was carried out by an in-house modified electron beam writing system using JOEL JSM 6460LA SEM integrated with ELPHY Quantum pattern generator. Following an introduction of this technique, the software description, pattern design formation and resist development are separately examined and discussed.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.relation.ispartofseriesProceedings of the International Postgraduate Conference on Engineering (IPCE 2010)en_US
dc.subjectSemiconductor deviceen_US
dc.subjectElectron beam lithography (EBL)en_US
dc.subjectPhotolithographyen_US
dc.subjectNanowiresen_US
dc.titleApplication of e-beam lithography for nanowire developmenten_US
dc.typeWorking Paperen_US
dc.publisher.departmentCentre for Graduate Studiesen_US
dc.contributor.urlaeiou_0410@yahoo.co.uken_US


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