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dc.contributor.authorZaliman, Sauli, Dr.
dc.contributor.authorRetnasamy, Vithyacharan
dc.contributor.authorAaron, Koay Terr Yeow
dc.contributor.authorSiew Chui, Goh
dc.contributor.authorKhairul Anwar, Mohamad Khazali
dc.contributor.authorNooraihan, Abdullah
dc.date.accessioned2014-04-13T04:28:33Z
dc.date.available2014-04-13T04:28:33Z
dc.date.issued2014
dc.identifier.citationApplied Mechanics and Materials, vol.487, 2014, pages 71-74en_US
dc.identifier.issn1662-7482
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/33657
dc.descriptionLink to publisher's homepage at http://www.ttp.net/en_US
dc.description.abstractAluminium metallization has a disadvantage when it comes to high-end applications as it cannot withstand the high temperature and pressure. This paper studies the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of CF₄ and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are-6.3608, -3.2858, and-5.394 respectively. All three factors gave negative effects. This implies that the surface roughness decreases when ICP power, Bias power, and working pressure is high. The ICP Power is the most influential factor followed by working pressure, and bias power.en_US
dc.language.isoenen_US
dc.publisherTrans Tech Publicationsen_US
dc.subjectCF₄+Argonen_US
dc.subjectDOEen_US
dc.subjectPlatinumen_US
dc.subjectReactive Ion Etching (RIE)en_US
dc.subjectSurface roughnessen_US
dc.titleSurface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited waferen_US
dc.typeArticleen_US
dc.identifier.urlhttp://www.scientific.net/AMM.487.71
dc.identifier.doi10.4028/www.scientific.net/AMM.487.71
dc.contributor.urlzaliman@unimap.edu.myen_US


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