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Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs
(Institute of Electrical and Electronics Engineers (IEEE), 2012-01)
This paper analyzes and models the drain-induced barrier lowering (DIBL) for ultrathin silicon body and ultrathin silicon body and thin buried oxide (UTBB) SOI MOSFETs. The channel depth appears as the primary factor in ...
Impact of self-heating and substrate effects on small-signal output conductance in UTBB SOI MOSFETs
(Elsevier Ltd, 2012-05)
The frequency variation of the output conductance in ultra-thin body with ultra-thin BOX (UTBB) SOI MOSFETs without a ground plane is studied through measurements and two-dimensional simulations. Two effects causing the ...