Browsing School of Microelectronic Engineering (Articles) by Title

Now showing items 165-184 of 185

    • Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application 

      Ali Hussain, Reshak, Prof. Dr.; Mukhzeer, Mohamad Shahimin, Dr.; Safizan, Shaari; N., Johan (Elsevier Ltd., 2013-11)
      The potential of solar cells have not been fully tapped due to the lack of energy conversion efficiency. There are three important mechanisms in producing high efficiency cells to harvest solar energy; reduction of light ...

    • The surface morphology characterization of electroless nickel immersion gold under bump metallurgy (UBM) using SEM 

      Mohd Khairuddin, Md Arshad; Mohd Nazrin, Md Isa; Sohiful Anuar, Zainol Murad (American Institute of Physics, 2007-05-09)
      This paper presents the surface morphology characterization at each process step in electroless nickel immersion gold (ENIG) deposition using Scanning Electron Microscope (SEM). The characterization start at initial bond ...

    • Surface roughness analysis on reactive ion etched aluminium deposited wafer 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Aaron, Koay Terr Yeow (Trans Tech Publications, 2014)
      This paper investigates the factors that affect the surface roughness on an Aluminium deposited wafer after reactive ion etching (RIE) using a combination of Tetrafluoromethane (CF₄) and Oxygen (O₂) gaseous. A total of ...

    • Surface roughness and wettability correlation on etched platinum using reactive ion ecthing 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Aaron, Koay Terr Yeow; Goh, Siew Chui; Khairul Anwar, Mohamad Khazali; Nooraihan, Abdullah (Trans Tech Publications, 2014-01)
      As the world of semiconductor is moving towards smaller and high-end applications, the quality of the bonding adhesion for wire bonding is very critical. Although aluminium has been the metallization of choice in integrated ...

    • Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Aaron, Koay Terr Yeow; Siew Chui, Goh; Khairul Anwar, Mohamad Khazali; Nooraihan, Abdullah (Trans Tech Publications, 2014)
      Aluminium metallization has a disadvantage when it comes to high-end applications as it cannot withstand the high temperature and pressure. This paper studies the factors that affect the surface roughness on a Platinum ...

    • Surface state on first-order ferroelectrics 

      Junaidah, Osman; Tilley, David Reginald; Rosy, Teh; Ishibashi, Y.; Mohamad Nazri, Abdul Halif; Khian, Hooi Chew (Springer Berlin / Heidelberg, 2006)
      In the presence of a surface the Landau-Devonshire equations of ferroelectricity must be extended to include a boundary condition. For a ferroelectric with a second-order transition in the case when the polarization p(z) ...

    • Symmetry energy of nuclear matter at low densities and clustering at the nuclear surface 

      Zaliman, Sauli, Dr.; Nooraihan, Abdullah; Khairul Anwar, Mohamad Khazali; Qamar Nasir, Usmani, Prof. Dr. (IOP Publishing Ltd, 2012)
      We present a density functional theory which connects nuclear matter equation of state, which incorporates clustering at low densities, with clustering in medium and heavy nuclei at the nuclear surface. This explains the ...

    • Temperature cycling analysis for ball grid array package using finite element analysis 

      Muhammad Nubli, Zulkifli; Zul Azhar, Zahid Jamal, Prof. Dr.; Ghulam, Abdul Quadir (Emerald Group Publishing Limited, 2011)
      Purpose – The purpose of this paper is to discuss the capability of finite element analysis (FEA) in performing the virtual thermal cycling reliability test to evaluate the reliability of solder joints in a ball grid array ...

    • Terahertz detection using nanorectifiers 

      Shahrir Rizal, Kasjoo, Dr.; Aimin, Song, Prof. (Institute of Electrical and Electronics Engineers (IEEE), 2013-12)
      We report on the low-temperature detection of free-space radiation at 1.5 THz using a unipolar nanodiode, known as the self-switching diode (SSD), coupled with a spiral microantenna. The SSD, based on an asymmetric ...

    • Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit 

      Kilchytska, Valeria I.; Mohd Khairuddin, Md Arshad; Makovejev, Sergej; Olsen, Sarah H.; Andrieu, Francois; Poiroux, Thierry; Faynot, Olivier; Raskin, Jean Pierre; Flandre, Denis (Elsevier Ltd., 2012-04)
      In this paper, we analyze, for the first time to our best knowledge, the perspectives of ultra-thin body and ultra-thin BOX (UTBB) SOI CMOS technology for analog applications. We show that UTBB is a promising contender ...

    • Under Bump Metallurgy (UBM)-a technology review for flip chip packaging 

      Mohd Khairuddin Md Arshad; Uda Hashim; Muzamir Isa (Department of Mechanical Engineering, University Malaya, 2007)
      Flip chip packaging technology has been utilized more than 40 years ago and it still experiencing an explosives growth. This growth is driven by the need for high performance, high volume, better reliability, smaller size ...

    • Uninterruptible power supply monitoring system with Visual Basic 

      Sohiful Anuar, Zainol Murad; Mohd Nazrin, Md Isa; Norazeani, Abdul Rahman (Universiti Malaysia PerlisSchool of Microelectronic Engineering, 2006-12-29)
      In industrial process today, reliability of equipment is very important. Power supply must be able to cater the need of industrial process. In case of power failure, backup power supply system must be able to support the ...

    • UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime 

      Mohd Khairuddin, Md. Arshad; Makovejev, Sergej; Olsen, Sarah H.; Andrieu, F.; Raskin, Jean Pierre; Flandre, Denis; Kilchytska, Valeriya I. (Elsevier Ltd., 2013)
      In this work we investigate the effect of ground plane (GP) on analog figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) SOI MOSFETs. Based on experimental devices, both n- and p-type GP configurations ...

    • Velocity profile investigation of FFS microchannel at Re 100 

      Retnasamy, Vithyacharan; Zaliman, Sauli, Dr.; Taniselass, Steven; Nor Shakirina, Nadzri; Hsio Mei, Tan; Khairul Anwar, Mohamad Khazali; Nooraihan, Abdullah (Trans Tech Publications, 2014)
      Recently, microfluidics system has been widely employed in various areas for instance biomedical,pharmaceuticals and cell biological researchdue to its advantages. The flow behavior in microchannels with different ...

    • A voltage reference circuit for current source of RFIC blocks 

      Marzuki, Arjuna; Zaliman, Sauli; Ali Yeon, Md Shakaff (Emerald Group Publishing Limited, 2008)
      Purpose - The purpose of this paper is to design a voltage reference circuit for current source of radio frequency integrated circuit blocks. The voltage reference circuit is called voltage for current source (VCS). ...

    • Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous 

      Retnasamy, Vithyacharan; Zaliman, Sauli, Dr.; Aaron, Koay Terr Yeow; Goh, Siew Chui; Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr. (AENSI Publisher All rights reserved, 2013-10)
      Wettability in microfluidic has direct influence to its fluid flow channels. This paper investigates the variable parameters that affect the wetability in terms of contact angle on a Platinum deposited wafer after reactive ...

    • Wettability and surface roughness study on RIE treated aluminium deposited surface 

      Retnasamy, Vithyacharan; Zaliman, Sauli, Dr.; Uda, Hashim, Prof. Dr.; Palianysamy, Moganraj; Aaron, Koay Terr Yeow; Ramzan, Mat Ayub (Trans Tech Publications, 2014-04)
      Design of Experiment (DOE) is a technique for optimizing process which has controllable inputs and measurable outputs. As a method of DOE, 24 Full Factorial design is used to study the effect of Reactive Ion Etch towards ...

    • Wire bond shear test simulation on hemispherical surface bond pad 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Wan Mokhzani, Wan Norhaimi; Johari, Adnan, Assc. Prof. Dr.; Palianysamy, Moganraj (Trans Tech Publications, 2012-12)
      Wire bonding process is an interconnection method adopted in the semiconductor packaging manufactory. One of the method used to assess the reliability and bond strength of the bonded wires are wire bond shear test .In this ...

    • Wire bond shear test simulation on sharp groove surface bond pad 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Taniselass, Steven; Ahmad Husni, Mohd Shapri; Vairavan, Rajendaran (Trans Tech Publications, 2012-12)
      Wire bonding process is first level interconnection technology used in the semiconductor packaging industry. The wire bond shear tests are used in the industry to examine the bond strength and reliability of the bonded ...

    • WSS investigation in microfluidic FFS channel at Re 500 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Taniselass, Steven; Nor Shakirina, Nadzri; Hsio Mei, Tan; Khairul Anwar, Mohamad Khazali; Nooraihan, Abdullah (Trans Tech Publications, 2014-01)
      Wall shear stress (WSS) is one of the important variables in microfluidic devices. In this paper WSS distribution for a microfluidic device in Forward Facing Step (FFS) configuration has been investigated using Reynolds ...