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Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
(Nano Science and Technology Institute, 2006)
Experimental studies of nanowires formation are carried out by using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design ...
MOS Transistor (Fabricated Using In-House Low Cost Facilities)
(Malaysian Invention & Design Society (MINDS), 2006-05-19)
MOS Transistor is divided into two types: NMOS and PMOS. Majority carrier od NMOS is electrons whereby PMOS is holes. The MOS transistor consists of three regions namely source, drain and gate. Fabrication of MOS transistor ...
Affordable and Effective Microelectronic Engineering Teaching Package for Undergraduate Programme
(International Exhibition of Inventions, 2006-04-05)
The package, which is fully designed developed, using KUKUM in house expertise, is the first teaching laboratory that is purposely built for undergraduate microelectronic program in Malaysia.
MOS Transistor Mask Design Using SEM Based E-Beam Lithography
(Malaysian Invention & Design Society (MINDS), 2006-05-19)
Electron beam lithography (EBL) is one of the alternative tools in transferring micro and nano circuit patterns from design editor to the substrate. EBL is state-of-the-art technology for micro and even to nano feature ...