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Now showing items 11-15 of 15
Quantum Dot Single Electron Transistor Structure Formation Using E-Beam Lithography
(C. I. S. Network, 2007-05-18)
To achieve room temperature operation of single electron transistor (SET). To form single dot chanted for electron transport in SET via the Coufomb Blockade Oscillation (CBO) phenomenon.
Silicon Nanowires
(Malaysian Invention and Design Society (MINDS), 2007-05-18)
Silicon Nanowires is a new class of materials that have attracted attention and great research interest in the last few years because of their great potential applications in nanotechnology such as:
- nanoelectronic ...
Quantum Dot Single Electron Transistor: Design and Fabrication
(Kementerian Pengajian Tinggi Malaysia (KPTM), 2007-08-10)
To achieve room temperature operation of single electron transistor (SET). To form single dot chanted for electron transport in SET via the Coufomb Blockade Oscillation (CBO) phenomenon.
Silicon Nanowires
(AFAG Messen & Ausstellungen GmbH, 2007-11-01)
Silicon Nanowires with diameter or width of the order of a nanometer or 10o meter and length of the order of microns propel for a novel research in the construction of atomically controlled periodic systems with reduced ...
Nanogap Dielectric Biosensor for label free DNA Hybridization detection
(Universiti Malaysia Perlis, 2007)
Sensors based on nanogap capacitance changes are being developed for genomic and proteomic applications because they offer label-free detection on platforms amenable to high throughput configurations. This paper presents ...