Now showing items 1-2 of 2

    • A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation 

      Madnarski Sutikno; Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr. (Elsevier B.V., 2007-05)
      The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, ...
    • SOI Single-Electron Transistors (SET) design and process development 

      Amiza, Rasmi; Mohammad Nuzaihan, Md Nor; Uda, Hashim (Kolej Universiti Kejuruteraan Utara Malaysia, 2005-05-18)
      Single-electron transistor (SET) is attractive devices to use for large-scale integration. SET can be made very small, dissipate little power, and can measure quantities of charge much faster than MOSFETs. This makes SET ...