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A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
(Elsevier B.V., 2007-05)
The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, ...
Mask Making Process (Positive and Negative Mask)
(Kementerian Pengajian Tinggi Malaysia (KPTM), 2007-08-10)
Generally, two types of masks are used in MOSFET fabrication; positive mask and negative mask. These resists mask can be used either in lift off process or conventional lithography step depends on the fabrication process ...
Quantum Dot Single Electron Transistor Structure Formation Using E-Beam Lithography
(C. I. S. Network, 2007-05-18)
To achieve room temperature operation of single electron transistor (SET). To form single dot chanted for electron transport in SET via the Coufomb Blockade Oscillation (CBO) phenomenon.
MOS Transistor (Fabricated Using In-House Low Cost Facilities)
(Malaysian Invention & Design Society (MINDS), 2006-05-19)
MOS Transistor is divided into two types: NMOS and PMOS. Majority carrier od NMOS is electrons whereby PMOS is holes. The MOS transistor consists of three regions namely source, drain and gate. Fabrication of MOS transistor ...
Affordable and Effective Microelectronic Engineering Teaching Package for Undergraduate Programme
(International Exhibition of Inventions, 2006-04-05)
The package, which is fully designed developed, using KUKUM in house expertise, is the first teaching laboratory that is purposely built for undergraduate microelectronic program in Malaysia.
Quantum Dot Single Electron Transistor: Design and Fabrication
(Kementerian Pengajian Tinggi Malaysia (KPTM), 2007-08-10)
To achieve room temperature operation of single electron transistor (SET). To form single dot chanted for electron transport in SET via the Coufomb Blockade Oscillation (CBO) phenomenon.
A cost effective and consummate fabrication teaching set up for microelectronic engineering undergraduate
(Malaysian Invention & Design Society (MINDS), 2005-05-19)
The package, which is fully designed and developed using KUKUM in-house expertise, is the first teaching laboratory that is purposely built for undergraduate microelectronic program in Malaysia.
Si-quantum Dots (QD) and SiO2 tunnel barriers
(Universiti Malaysia Perlis (UniMAP), 2008-07)
Oxidation of Si for nanostructures on silicon-on-insulator
(SOI) substrates is a key process in the fabrication of Si
single electron transistor (SET). The most di cult aspect of
the fabrication process is the formation ...
Electrode design and planar uniformity of anodically etched small area porous silicon
(American Institute of Physics, 2009-06-01)
Porous silicon layer microstructure is sensitive to many parameters, which need to be controlled during etching. These include not only anodization time, current density, applied potential and electrolyte composition but ...
MOSFET Technology for Microelectronic Engineering Undergraduate Programme
(Kementerian Pengajian Tinggi Malaysia (KPTM), 2005-09-30)
This project focused on the process development of MOSFET fabrication. Microelectronic fabrication equipment and facilities from the micro fabrication cleanroom laboratory in KUKUM were used for the purposes of this project. ...