Browsing Journal Articles by Subject "Semiconductors"
Now showing items 1-10 of 10
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Analytical Approach Assisted Simulation Study of Si, SiGe, and InP based Bipolar Junction Transistors
(Universiti Malaysia Perlis (UniMAP), 2019-04)This paper presents a comparative study of Si, SiGe and InP based Bipolar Junction Transistors (BJT) with reference to their DC, AC, and RF characteristics. Double diffusion doping profile in each case is used to determine ... -
Correlation between the tonicity and the polarity in semiconductors
(Universiti Malaysia Perlis, 2007)Using the polarity with respect to energy gap Egrx, an empirical formula of tonicity factor is obtained for a specific class of semiconductors. The computation of tonicity character is distinguished with high degree of ... -
Degradation of single layer MEH-PPV organic light emitting diode (OLED)
(Institute of Electrical and Electronics Engineering (IEEE), 2006)The degradation process of a single layer electroluminescence (EL) polymer MEH-PPV organic light emitting diode (OLED) with the MEH-PPV thickness of 57plusmn3 nm is discussed. Typical structure of OLED fabrication is ... -
Density of electronic states and dispersion of optical functions of defect chalcopyrite CdGa2X4 (X = S, Se): DFT study
(Elsevier Limited, 2013)A density functional theory (DFT) based on full potential linear augmented plane wave (FPLAPW) was used for calculating the electronic structure, charge density and optical properties of CdGa2X4 (X = S, Se) compounds. Local ... -
DFT calculation of the electronic and optical properties of Ag 2PdO2 from X-ray and neutron crystallographic data
(Elsevier B.V., 2013)Electronic and optical properties of ternary silver palladium oxide (Ag2PdO2) are investigated using density functional theory. Two different possible approximations for the exchange correlation potentials were employed. ... -
Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
(IOP Publishing Ltd, 2008-01-29)The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ... -
Optically enhanced N doped ZnO amorphous nanostructures grown by low cost ultrasonicated sol–gel route
(Universiti Malaysia Perlis (UniMAP), 2022-07)N doped ZnO amorphous nanostructures with excellent optical properties were grown by the ultrasonicated sol-gel route. The samples were characterized using structural, morphological and optical studies. XRD patterns confirmed ... -
Simulasi Fabrikasi Simpangan Cetek Ultra menggunakan Resapan Dopan daripada SOD (Spin On Dopant)
(Universiti Malaysia Perlis, 2006)Pembentukan simpangan cetek ultra merupakan suatu proses yang kritikal dalam fabrikasi peranti-peranti submikron bagi teknologi litar terkamil pada masa hadapan. Di dalam penulisan ini, simulasi proses pembentukan simpangan ... -
Single-crystal oxoborate (Pb 3O) 2(BO 3) 2WO 4: Growth and characterization
(Elsevier Ltd, 2012-09)An oxoborate, (Pb 3O) 2(BO 3) 2WO 4, has been prepared by solid-state reaction methods below 620°C. Single-crystal XRD analysis shows that it crystallizes in the orthorhombic group Cmcm with a = 18.480(4) , b = 6.3567(13) ... -
Theoretical prediction of equation of state for semiconductors
(Universiti Malaysia Perlis, 2016)The isothermal EOS provides a powerful tool for theoretical prediction of different thermo elastic properties at extreme compressions. In the present work an attempt has been made for theoretical computation of pressure ...