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Issue DateTitleAuthor(s)
2013Relationship between controllable process parameters on bump height in ENIGZaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Fairul Afzal, Ahmad Fuad; Ehkan, Phaklen, Dr.; Muhamad Hafiz,  Ab Aziz; zaliman@unimap.edu.my; vc.sundress@gmail.com; fairul@unimap.edu.my; phaklen@unimap.edu.my; muhamadhafiz@unimap.edu.my
2014Analysis on surface roughness and surface reflectance through DOEZaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Ong, Tee Say; zaliman@unimap.edu.my
2014Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited waferZaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Aaron, Koay Terr Yeow; Siew Chui, Goh; Khairul Anwar, Mohamad Khazali; Nooraihan, Abdullah; zaliman@unimap.edu.my
2014Surface roughness analysis on reactive ion etched aluminium deposited waferZaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Aaron, Koay Terr Yeow; zaliman@unimap.edu.my
2014Investigation of surface roughness on platinum deposited wafer after reactive ion etching using SF₆+Argon gaseousZaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Aaron, Koay Terr Yeow; Siew Chui, Goh; Khairul Anwar, Mohamad Khazali; Nooraihan, Abdullah; zaliman@unimap.edu.my
2013Bump height at low temperature analysisZaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Fairul Afzal, Ahmad Fuad; Ehkan, Phaklen, Dr.; Steven, Taniselass; zaliman@unimap.edu.my; rcharan@unimap.edu.my; fairul@unimap.edu.my; phaklen@unimap.edu.my; steven@unimap.edu.my
Oct-2013Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseousRetnasamy, Vithyacharan; Zaliman, Sauli, Dr.; Aaron, Koay Terr Yeow; Goh, Siew Chui; Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr.; vc.sundress@gmail.com; zaliman@unimap.edu.my; vc@unimap.edu.my

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