Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous

Abstract

Wettability in microfluidic has direct influence to its fluid flow channels. This paper investigates the variable parameters that affect the wetability in terms of contact angle on a Platinum deposited wafer after reactive ion etching (RIE). A total of four controllable process variables, with 16 sets of experiments were scrutinized using a designed design of experiment (DOE). The four variables in the investigation are ICP power, Bias power, working pressure, and type of gaseous used. The result suggests that the type of gaseous is the most significant effect contributing to the contact angle values where SF6+Ar gives higher values of contact angle compared to CF4+Ar gas. All the experiments produced the contact angle greater than 90° and are included in hydrophilic category.