Performance improvement of optoelectronic devices using Group III Nitride based quantum dot

Abstract

Quantum dot has become a subject of incredible interest in the field of semiconductor optoelectronic device design for the researchers due to some of their unique properties. Among the wide range of optoelectronic devices some important characteristics of solar cell and laser have been studied extensively. These two devices are chosen because of the importance of these optoelectronic semiconductor devices in the field of renewable energy and optical fiber communication respectively. Recently it has been acknowledged that the researchers are paying more and more attention to the group-III nitride based quantum dots. Therefore this research is devoted to investigate the performance improvement of solar cell and laser using InN based quantum dot in the active layer of the device structure. In this research work the performance improvement of both these devices have been achieved by changing the active layer material without affecting other structural parameters. The effect of lattice constant on band gap energy optimization of ������������������������������������ has been investigated initially. From the numerical analysis it has been found that ������������������������������������ offers a band gap energy ranging from 0.7eV - 3.5eV, which makes it a suitable material for solar cell to absorb a wide range of light energy. Furthermore, it has been demonstrated that In0.87Ga0.13N is capable of emitting light at the wavelength of 1.55μm, which offers the lowest attenuation for signal transmission through optical fiber. Therefore the result of initial investigation ascertains that ������������������������������������ can be a promising material for the fabrication of solar cell as well as laser.