| dc.contributor.author | Naser Mahmoud, Ahmed, Dr. | |
| dc.contributor.author | Yarub, Al-Douri, Assoc. Prof. Dr. | |
| dc.contributor.author | Alwan, M. Alwan | |
| dc.contributor.author | Ghassan Ezzulddin, Arif | |
| dc.contributor.author | Allaa A., Jabbar | |
| dc.date.accessioned | 2014-03-04T13:49:56Z | |
| dc.date.available | 2014-03-04T13:49:56Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | Procedia Engineering, vol. 53, 2013, pages 393-399 | en_US |
| dc.identifier.isbn | 978-162748634-7 | |
| dc.identifier.issn | 1877-7058 | |
| dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S1877705813001707 | |
| dc.identifier.uri | http://dspace.unimap.edu.my:80/dspace/handle/123456789/32336 | |
| dc.description | Link to publisher's homepage at www.elsevier.com | en_US |
| dc.description.abstract | We prepared nanostructures silicon photodiode (nPSi) by using laser assisted etching at fixed current density (30 mA/cm2) with different etching wavelengths of laser diode (532, 650 and 810 nm), a (metal/nanostructure silicon/metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes to improve the characterizations of PSi photodiode, A responsivity of (3A/w) was measured at (450 nm) with low value of dark current (1.33 μA/cm2) and higher value of photo current (610 μA/cm2) at 5 volt reverse bias. The results show that the wavelength IR (810 nm) give us the best photodiode and electrical characteristics | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier B.V. | en_US |
| dc.subject | Nanostructures silicon photodiode (nPSi) | en_US |
| dc.subject | Laser assisted etching | en_US |
| dc.title | Characteristics of nanostructure silicon photodiode using laser assisted etching | en_US |
| dc.type | Article | en_US |
| dc.contributor.url | naser@usm.my | en_US |
| dc.contributor.url | yarub@unimap.edu.my | en_US |
